Wafer drying method and device

Abstract

The invention discloses a wafer drying method and device in the field of integrated circuit manufacture. Firstly graphs on the surface of a wafer and depth of channels of the graphs are identified; then a liquid suction reference point is arranged according to the graphs on the surface of the wafer and the depth of the channels of the graphs; a position of a suction tube is adjusted to midpoints of the bottom portions of the channels of the graphs to suck liquid according to the liquid suction reference point; and finally gas drying is carried out on the channels of the graphs after completion of the liquid suction. The wafer drying method and device firstly uses the suction tube to suck most liquid in a wafer slot, and then rapidly uses nitrogen to dry surplus liquid in the slot, so that a fact that the slot on the wafer collapses and slot feature structures are damaged due to direct blowing of the nitrogen is avoided, use of a drying agent is avoid, and damage to a human body and secondary pollution on the wafer are prevented.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a wafer drying method and device. Background technique [0002] The graphics wafer cleaning process is generally divided into three steps. First, it is cleaned with chemical liquid, then rinsed with ultrapure water, and finally blown dry with nitrogen. As the feature size (line width) of integrated circuits enters the deep sub-micron stage, especially after 65 nm, the drying process after wafer cleaning becomes more and more challenging. This is because as the line width decreases, the traditional method of only using nitrogen to dry the residual liquid on the wafer surface gradually increases the capillary force acting between the two interconnect lines (trench) when the liquid evaporates. So that the trunking collapses, causing damage to the characteristic structure, such as figure 1 shown. [0003] There is a patent report using isopropanol (IPA) mist drying ...

AI Technical Summary

Problems solved by technology

However, IPA is an organic substance, which is easy to burn when heated, and IPA is toxic and harmful to human health. In addition, IPA can also react with some cleaning liquids (such as ST250) to form solid particles, which will contaminate the wafer again.

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