A CMOS circuit structure, its preparation method and display device

Abstract

Provided are a CMOS circuit structure, a preparation method thereof and a display device, wherein a PMOS region in the CMOS circuit structure is of a LTPS TFT structure, that is, the PMOS semiconductor layer is prepared from a P type doped polysilicon material; an NMOS region is of an Oxide TFT structure, that is, the NMOS semiconductor layer is made of an oxide material; three doping processes applied to the NMOS region during the LTPS process may be omitted in the case in which the NMOS semiconductor layer in the NMOS region is made of an oxide material instead of the polysilicon material, which may simplify the preparation of the CMOS circuit structure as well as reduce a production cost. Furthermore, it is only required to crystallizing the PMOS semiconductor layer, which may also extend the lifespan of laser tube, contributing to reduction of the production cost.

Description

technical field [0001] The invention relates to the technical field of circuit manufacturing, in particular to a CMOS circuit structure, a preparation method thereof and a display device. Background technique [0002] Complementary Metal Oxide Semiconductor (CMOS, Complementary Metal Oxide Semiconductor) is composed of P-channel Metal Oxide Semiconductor (PMOS, Positive channel MetalOxide Semiconductor) and N-channel Metal Oxide Semiconductor (NMOS, Negativechannel-Metal-Oxide-Semiconductor). constitute. [0003] At present, low temperature polysilicon (LTPS, Low Temperature Poly-silicon) technology is generally used to prepare the semiconductor layers of the PMOS region and the NMOS region in the CMOS circuit respectively. The preparation process is relatively complicated, and the specific process steps are as follows: [0004] Step 1: On the base substrate 01, use a patterning process to form the pattern of the PMOS semiconductor layer 02 located in the PMOS area A, and t...

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Problems solved by technology

[0016] In the above-mentioned process of preparing CMOS circuits using the LTPS process, it is necessary to use at least 10 or more photoresist masks and at least 4 or more doping processes (P-type ion doping, N-type ion doping, LDD doping, etc.) and Ch doping), the production process is complex, the production cost is high, and, in step 1, the entire layer of a-Si material needs to be laser crystallized to obtain polysilicon material, and the long-time laser crystallization process will increase the product’s Production cost, and will reduce the service life of the laser tube, but also increase the production cost

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