Thin high-power and low-forward surface-mounted packaging diode

Abstract

The invention discloses a thin high-power and low-forward surface-mounted packaging diode which comprises a Schottky silicon chip, an upper material sheet, a lower material sheet and packaging epoxy resins. The Schottky silicon chip is welded between a lateral surface of a lower section of the upper material sheet and a lateral surface of a lower section of the lower material sheet through solders, the packaging epoxy resins are packaged outside the Schottky silicon chip, the upper material sheet and the lower material sheet, and an upper end piece of the upper material sheet, a lower end piece of the lower material sheet and the outer surface of the lower material sheet are arranged outside the packaging epoxy resins. According to the diode, the surface-mounted packaging diode utilizes the Schottky silicon chip, forward voltage drops are reduced without increasing the silicon chip area, and a current 10A can be tested to be below 0.44V; and platy material sheets are used, and the thickness of the diode is decreased, so that the shape is thin and the size is small; large areas of end pieces are exposed, so that good heat dissipation capabilities are provided; and accordingly, the power is large, the heat dissipation is good, and the diode is convenient to be surface-mounted.

Description

technical field [0001] The invention relates to a surface-mounted diode, in particular to a thin, high-power, low-forward surface-mounted diode. Background technique [0002] At present, the demand and development of high-power surface-mounted diodes are hot spots and will be very rapid. With the miniaturization of product circuit boards, the development trend of product miniaturization, especially the development of high-power miniaturized surface-mounted diodes. for swift. However, while the current surface-mounted diodes are gradually reducing in size, there are many problems: In order to ensure high power, a silicon chip with a larger area is used to reduce the forward voltage drop of the diode, but due to the smaller package shape It is beneficial to the application, and at the same time, the performance will be low due to the influence of the packaging stress; in addition, the heat generation will increase due to maintaining high power and minimizing the volume, whil...

AI Technical Summary

Problems solved by technology

However, while the current surface-mounted diodes are gradually reducing in size, there are many problems: In order to ensure high power, a silicon chip with a larger area is used to reduce the forward voltage drop of the diode, but due to the smaller package shape It is beneficial to the application, and at the same time, the performance will be low due to the influence of the packaging stress; in addition, the heat generation will increase due to maintaining high power and minimizing the volume, while the terminals of traditional surface-mounted diodes are mostly strip-shaped, which cannot effectively dissipate heat. So the temperature rise is larger

For this reason, some manufacturers use jumpers, but the jumpers are small and irregular, which makes manual operation difficult and inefficient; recently, some foreign-funded enterprises use Clip bonder automatic equipment to operate, but the efficiency is lower and the cost is higher.

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