Method for improving stability of alignment precision of high-transparency mask plate

A technology with high light transmittance and overlay accuracy, applied in the field of semiconductor manufacturing, can solve the problems of affecting the production efficiency of lithography process, offset of registration accuracy, and reduction of wafer yield, so as to improve yield and process production. Efficiency, reducing the degree of thermal expansion of the lens, and maintaining stable overlay accuracy
CN103019042AActive Publication Date: 2013-04-03SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2013-04-03

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Abstract

The invention discloses a method for improving the stability of an alignment precision of a high-transparency mask plate. The method comprises the steps of reversing a light-transmitting region of a high-transparency positive photoresist mask plate to obtain a low-transparency mask plate with a light-transmitting region opposite to the light-transmitting region of the positive photoresist mask plate; and taking the reversed low-transparency mask plate as an aeration mask plate, and utilizing negative photoresist to carry out aeration and developing on a silicon wafer. Therefore, the energy for heating a lens in an aeration process is effectively reduced and the degree of expanding of the lens by heating is reduced after the silicon water is continuously aerated; and the alignment precision is kept stable, and the yield and the process production efficiency of the silicon wafer are improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the stability of the overlay precision of a mask plate with high light transmittance. Background technique

[0002] With the improvement of the integration of semiconductor components, the line width requirements of semiconductor components are getting smaller and smaller, and the control of critical dimensions (CD, Critical Dimension) is becoming more and more important. The requirements are also getting higher and higher. In the photolithography process, a certain thickness of photoresist is usually coated on the surface of the wafer, and then a photolithography machine (scanner) is used to transfer the pattern exposure on the mask plate to the silicon wafer. There are two types of photoresist used in the photolithography process, positive photoresist and negative photoresist. Will not be removed by developer. The negative photoresi...

Claims

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