Manufacture method for semiconductor device
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as easy residue, and achieve the effect of suppressing warpage
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no. 1 Embodiment approach
[0022] The method of manufacturing the semiconductor device according to the first embodiment will be described with reference to the drawings.
[0023] Figure 1A to Figure 1D , Figure 2A to Figure 2C , Figure 3A to Figure 3C , Figure 4A to Figure 4C as well as Figure 5A to Figure 5C , are diagrams showing manufacturing steps of the semiconductor device according to the first embodiment. First, if Figure 1A As shown, an 8-inch Si wafer or the like is prepared as a supporting substrate 1 . A release layer 2 is formed on a support substrate 1 . The supporting substrate 1 may be a glass substrate, a sapphire substrate, a resin substrate, or the like.
[0024] The release layer 2 is formed of, for example, a thermoplastic resin such as polystyrene resin, methacrylic resin, vinyl resin, polypropylene resin, cellulose resin, or polyimide resin. The thickness of the release layer 2 is preferably set within a range of 1 to 20 μm, more preferably within a range of 3 to 15 ...
no. 2 Embodiment approach
[0057] A method of manufacturing a semiconductor device according to the second embodiment will be described with reference to the drawings. Figure 11A to Figure 11C as well as Figure 12A to Figure 12B , are diagrams showing the manufacturing process of the semiconductor device according to the second embodiment. First, if Figure 11A As shown, a wiring substrate 31 having a plurality of device formation regions X and a dicing region D provided between the plurality of device formation regions X is prepared. Next, if Figure 11B As shown, a plurality of semiconductor chips 32 are mounted on a wiring board 31 . The semiconductor chips 32 are respectively disposed on the device formation region X of the wiring substrate 31 .
[0058] The mounting process of the semiconductor chip 32 is implemented using flip-chip (FC) connection, for example. The connection between the wiring board 31 and the semiconductor chip 32 is not limited to the FC connection, but wire bonding may ...
no. 3 Embodiment approach
[0063] A method of manufacturing a semiconductor device according to the third embodiment will be described with reference to the drawings. Figure 13A to Figure 13C as well as Figure 14A to Figure 14C , are diagrams showing the manufacturing process of the semiconductor device according to the third embodiment. Although Figure 13A to Figure 13C as well as Figure 14A to Figure 14C Although the manufacturing process of one semiconductor device is shown, the manufacturing method of the third embodiment can be similarly applied to a manufacturing process using a semiconductor substrate having a plurality of device formation regions. In this case, the same manufacturing process is applied except that the semiconductor device is finally singulated by cutting the semiconductor substrate along the dicing region.
[0064] First, if Figure 13A As shown, the wiring layer 42 is formed on the first surface 41 a side of the semiconductor substrate 41 . The wiring layer 42 has a co...
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Abstract
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