Method for forming semiconductor integrated device

Abstract

A formation method of a semiconductor integrated device includes: forming a first opening in a mask layer in a first region, forming a second opening in the mask layer in a second region, forming a first sidewall on the side wall of the first opening, forming a second sidewall on the side wall of the second opening, fully filling the first opening and the second opening with polycrystalline silicon by same process, forming word lines of a split-gate flash memory with the polycrystalline silicon in the first opening, and forming a polysilicon resistor with the polycrystalline silicon in the second opening. Therefore, the polysilicon resistor is formed while the split-gate flash memory is formed, no extra process is added, and cost of production process is reduced.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a method for forming a semiconductor integrated device. Background technique [0002] As the feature size (CD, Critical Dimension) of semiconductor devices becomes smaller and smaller, the integration of semiconductor chips becomes higher and higher, and the number and types of devices that need to be formed per unit area are also increasing, thus affecting the semiconductor process. requirements are also getting higher. How to rationally arrange the positions of various devices, and how to save semiconductor process steps and materials by using the common points of each device manufacturing has become a hot research topic. [0003] In the manufacture of semiconductor devices, polysilicon is a very commonly used conductive material, which can usually be used to make gate electrodes of MOS transistors, high resistance polysilicon resistors, floating gates of flash memory, control gates...

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Problems solved by technology

However, the integration degree of the forming

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