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Polarization-reinforced p-i-n junction InGaN solar cell

A p-i-n, solar cell technology, applied in the field of solar cells, can solve the problems of lower solar cell conversion efficiency, lower cell conversion efficiency, lower cell efficiency, etc., achieve low recombination probability, reduce the number and the generation of dislocations, and improve the conversion efficiency. Effect

Inactive Publication Date: 2015-02-11
NANJING UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

In conventional solar cells a Ga 1-a N materials are often directly grown on GaN materials, however, due to GaN materials and In a Ga 1-a There is a large lattice mismatch in N materials. On the one hand, the lattice mismatch will lead to In a Ga 1-a The quality of N material decreases, on the other hand, the lattice mismatch will increase the In a Ga 1-a Polarized electric field in N material, such that In a Ga 1-a The conversion efficiency of N solar cells is further reduced
In the usual structure, the i-InGaN layer as the main light-absorbing layer either has no stress or compressive strain. In the absence of stress, there is a spontaneous polarization electric field in the i-InGaN layer, reducing the Cell conversion efficiency; if there is compressive strain, it will further reduce cell efficiency

Method used

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  • Polarization-reinforced p-i-n junction InGaN solar cell

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Experimental program
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Effect test

Embodiment 1

[0019] see figure 1 , the structure of the p-i-n junction InGaN solar cell of this embodiment includes from bottom to top: Si substrate 1, GaN layer 2, fully strained relaxed In y Ga 1-y N layer 3, InGaN superlattice layer 4, high In composition n-In y Ga 1-y N layer 5, high In composition i-In x Ga 1-x N layer 7, high In composition p-In y Ga 1-y N layer 8 , p-GaN layer covering layer 9 . Among them, the thickness of GaN layer 2 is 1000nm; full strain relaxation In y Ga 1-y The thickness of N layer 3 is 1000nm, y is 0.5; InGaN superlattice layer 4 contains 10 periods of In 0.5 Ga 0.5 N / GaN heterojunction, where In in each period 0.5 Ga 0.5 N layer on top, GaN on bottom, In in each cycle 0.5 Ga 0.5 N and GaN thickness are both 5nm; high In composition n-In y Ga 1-y The thickness of N layer 5 is 1000nm, y is 0.5, high In composition i-In x Ga 1-x The thickness of N layer 7 is 100nm, x is 0.3; high In composition p-In y Ga 1-y The thickness of the N layer 8 i...

Embodiment 2

[0021] The structure of this embodiment is basically the same as that of Embodiment 1, the difference is that the full strain relaxation In y Ga 1-y The thickness of N layer 3 is 500nm; InGaN superlattice layer 4 contains 5 periods of In 0.5 Ga 0.5 N / GaN heterojunction, where In in each period 0.5 Ga 0.5 Both N and GaN thickness are 1nm; high In composition n-In y Ga 1-yThe thickness of N layer 5 is 300nm, high In composition i-In x Ga 1-x The thickness of N layer 7 is 30nm; high In composition p-In y Ga 1-y The thickness of the N layer 8 is 50nm; the thickness of the p-GaN layer 9 is 10nm; the width of each electrode of the grid-shaped positive electrode 10 is 50nm, the electrode spacing is 500nm, and the thickness is 30nm; the electrode size of the negative electrode 6 is 0.3×0.3 mm 2 , with a thickness of 100nm.

Embodiment 3

[0023] The structure of this embodiment is basically the same as that of Embodiment 1, the difference is that the full strain relaxation In y Ga 1-y The thickness of N layer 3 is 800nm; InGaN superlattice layer 4 contains 3 periods of In 0.5 Ga 0.5 N / GaN heterojunction, where In in each period 0.5 Ga 0.5 N and GaN thickness are both 3nm; high In composition n-In y Ga 1-y The thickness of N layer 5 is 600nm, high In composition i-In x Ga 1-x The thickness of N layer 7 is 60nm; high In composition p-In y Ga 1-y The thickness of the N layer 8 is 100nm; the thickness of the p-GaN layer 9 is 20nm; the width of each electrode of the grid-shaped positive electrode 10 is 100nm, the electrode spacing is 1000nm, and the thickness is 100nm; the electrode size of the negative electrode 6 is 0.6×0.6 mm 2 , with a thickness of 200nm.

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Abstract

The invention discloses a polarization-reinforced p-i-n junction InGaN solar cell. The polarization-reinforced p-i-n junction InGaN solar cell structurally comprises a substrate, a GaN layer, an all-strain relaxation high-In component InyGal-yN layer, an InGaN superlattice layer, a high-In component n-InyGal-yN layer, a high In component i-InxGal-xN layer, a high In component p-InyGal-yN layer and a p-GaN coverage layer from bottom to top. A negative electrode is led out from the high-In component n-InyGal-yN layer, and a positive electrode is led out from the p-GaN coverage layer. The structure of the p-i-n junction InGaN solar cell is directly formed on the all-strain relaxation InGaN layer and the InGaN superlattice layer which cannot generate mismatch strain on the p-i-n junction In GaN solar cell, and quality of p-i-n junction InGaN solar cell materials and cell conversion efficiency can be effectively improved. Further, an i-InGaN layer lower in In components is sandwiched between an n-InGaN layer higher in In components and the p-InGaN layer, tension strain is introduced into the i-InGaN layer by mismatch of lattices, and conversion efficiency of the p-i-n junction InGaN solar cell can be further improved.

Description

technical field [0001] The invention relates to a solar cell, in particular to a p-i-n junction InGaN solar cell. Background technique [0002] Solar energy is an inexhaustible green energy source for human beings, and solar cells are mainly an optoelectronic device that converts sunlight energy into electrical energy by using the photovoltaic effect, and can be widely used in aerospace, national defense, industry and agriculture, and information electronics. , Housing cars and other fields provide a very important energy source for the sustainable development of human beings. [0003] Traditional solar cell materials mainly include Si series, GaAs series and other series of materials, but their photoelectric conversion efficiency is limited. At present, the highest single-junction solar cells of Si series and GaAs series can only reach 17% and 25%. It is because the energy gap width of these solar cell materials only corresponds to a part of the solar spectrum and can only...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/075H01L31/0304H01L31/0352
CPCY02E10/50Y02E10/548
Inventor 陈敦军张开骁张荣郑有炓
Owner NANJING UNIV