Unlock instant, AI-driven research and patent intelligence for your innovation.

Light extraction layer of led light-emitting chip and led device

A technology of LED chips and light extraction layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light output efficiency of LED light emitting devices and unfavorable light output of LED chip packaging devices, so as to improve light output efficiency, reduce reflection, improve The effect of light extraction efficiency

Active Publication Date: 2016-03-23
FOSHAN NATIONSTAR SEMICON
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the light-emitting device improves the light extraction efficiency at the interface between the semiconductor layer and the light extraction layer, the critical angle at which total reflection occurs at the interface between the light extraction layer and the epoxy resin decreases, which is not conducive to the light extraction of the LED chip packaging device, and still There is a problem of low light extraction efficiency of LED light emitting devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light extraction layer of led light-emitting chip and led device
  • Light extraction layer of led light-emitting chip and led device
  • Light extraction layer of led light-emitting chip and led device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] see figure 1 . figure 1 It is a structural schematic diagram of the LED light-emitting chip of Embodiment 1 of the present invention. The LED light-emitting chip includes a semiconductor layer 11 and a light extraction layer 12 in direct contact with the semiconductor layer 11 . The surface of the light extraction layer 12 in direct contact with the semiconductor layer 11 is the first surface 12-1, the surface of the light extraction layer 12 in direct contact with the external medium (not shown in the figure) is the second surface 12-2, and the first surface 12 The refractive index of -1 is not less than the refractive index of the semiconductor layer 11. It should be noted that the term "not less than" should be understood as being equal to or slightly greater than the refractive index of the first surface 12-1 of the light extraction layer. The refractive index of 11 is similar. According to the calculation formula of reflectivity, when the light is vertically inci...

Embodiment 2

[0040] The difference between the LED light-emitting chip provided in the second embodiment and the first embodiment is that the light extraction layer 12 is composed of multiple light extraction sub-layers with different refractive indices, and the structure and manufacturing method of other parts are the same as those in the first embodiment. For the sake of brevity, this embodiment only describes the light extraction layer in detail, and please refer to Embodiment 1 for other parts.

[0041] combine figure 2 , the light extraction layer 12 is composed of k light extraction sublayers, and the refractive index of each light extraction sublayer changes stepwise, and the light extraction sublayer in contact with the semiconductor layer 11 is the first light extraction sublayer, in turn is the second light extraction sub-layer, ..., the i-th light extraction sub-layer, the i+1th light extraction sub-layer..., the k-th light extraction sub-layer, the k-th light extraction sub-la...

Embodiment 3

[0045] Combining FIG. 3( a ) and FIG. 3( b ), FIG. 3( a ) is a schematic cross-sectional view of the LED chip structure in Embodiment 3, and FIG. 3( b ) is a top view of the LED chip structure in Embodiment 3. The LED light-emitting chip includes a semiconductor layer 11 and a conductive layer 13 located on the semiconductor layer 11, wherein the conductive layer 13 is a porous structure, and the holes can be formed on the conductive layer 13 by methods such as wet etching or dry etching, The hole may be circular, rectangular, oval or other regular or irregular shape. The light extraction layer 12 described in the first or second embodiment is filled in the hole, and the conductive layer is controlled by adjusting the surface area of ​​the light extraction layer 12, the surface area of ​​the conductive layer 13 and the distance between the holes. electrical conductivity.

[0046] The formation method of the light extraction layer 12 can firstly deposit the light extraction la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a light extraction layer of an LED luminous chip and an LED device. The LED luminous chip comprises a semiconductor layer and the light extraction layer which is in direct contact with the semiconductor layer, the surface, which is in direct contact with the semiconductor layer, of the light extraction layer is a first surface, the surface, which is in direct contact with an external medium, of the light extraction layer is a second surface, the extractive index of the first surface is not smaller than that of the semiconductor layer, the extractive index of the light extraction layer is in a decline trend from the first surface to the second surface, and the refractive index of the second surface is not larger than that of the external medium. Owing to the light extraction layer of the LED luminous chip, the light extraction efficiency and the luminous efficiency of the LED luminous chip can be improved simultaneously.

Description

technical field [0001] The invention relates to a semiconductor light emitting device, in particular to a light extraction layer of an LED chip and an LED device capable of simultaneously improving light extraction efficiency and light output efficiency. Background technique [0002] In recent years, with the continuous and in-depth development of semiconductor lighting, light-emitting diodes (LEDs) have attracted more and more attention due to their high electro-optical conversion efficiency and environmental protection advantages. The core component of semiconductor lighting products is the LED chip. Its research and production technology has developed rapidly, and the brightness and reliability of the chip have been continuously improved. In the process of R&D and production of LED chips, the improvement of the external quantum efficiency of the device has always been the core content. Therefore, the improvement of the light extraction efficiency is very important. The l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/44H01L33/48
Inventor 康学军李鹏张冀
Owner FOSHAN NATIONSTAR SEMICON