Memory resistor and production method thereof

Abstract

The invention discloses a memory resistor. The memory resistor comprises a substrate layer. Multiple isolating layers are arranged above the substrate layer. A memory resistance unit is arranged between each two adjacent isolating layers. Each memory resistance unit comprises two mobile ion barrier layers and a planar electrode layer between the mobile ion barrier layers. The memory resistor further comprises a top electrode etching groove formed by etching from the topmost isolating layer to the bottommost isolating layer. The surface of the top electrode etching groove and the surface of the topmost isolating layer are covered with an electrolyte layer. A top electrode is arranged in the top electrode etching groove. The memory resistor further comprises a plurality of bottom electrodes formed by etching from the electrolyte layer covering the surface of the topmost isolating layer to the planar electrode layers of the memory resistance units. The invention further provides a production method of the memory resistor. The process of the three-dimensional memory resistor in the vertical structure is simplified, and the technology of mobile metal ion barrier layers solves the problem of mobile ion pollution.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a memristive device with a three-dimensional structure. Background technique [0002] Memristor is the fourth basic circuit element independent of resistors, capacitors and inductors. With its unique resistance memory function, it can simultaneously realize multi-ary operation and multi-bit storage function in a single device unit. In 1971, Professor Cai Shaotang of Berkeley theoretically predicted the existence of memristors. In 2008, researchers at Hewlett-Packard Labs used TiO2 oxide materials to prepare prototype memristor devices. Memristive devices exhibit nonlinear current-voltage characteristics, have resistive memory function, and have great application potential in high-density storage, reconfigurable logic circuits and neuron devices. Utilizing the nonlinear electrical characteristics of memristor devices, two or more resistance states can be real...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is: the complexity of the three-dimensional structure and the pollution of movable metal ions faced by memristors based on solid electrolyte materials

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