Light-emitting diode

Abstract

The invention discloses a light-emitting diode which comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer, wherein the substrate has a first surface and a second surface which are opposite to each other, the first semiconductor, the active layer and the second semiconductor are sequentially stacked on the first surface of the substrate, a first electrode is electrically connected with the first semiconductor layer, a second electrode is electrically connected with the second semiconductor, and the second surface of the substrate is a light-emitting surface of the light-emitting diode. At least one surface of the substrate further comprises a plurality of three-dimensional nanometer structures which extend parallelly, each three-dimensional nanometer structure comprises a first protruding edge and a second protruding edge which extend parallelly, a first groove is arranged between the adjacent first protruding edge and second protruding edge, a second groove is arranged between the adjacent three-dimensional nanometer structures, and the depth of the first groove is smaller than that of the second groove.

Description

technical field [0001] The invention relates to a light-emitting diode, in particular to a light-emitting diode with a three-dimensional nanostructure array. Background technique [0002] High-efficiency blue, green, and white light-emitting diodes made of gallium nitride semiconductor materials have remarkable features such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional light-emitting diode usually includes an N-type semiconductor layer, a P-type semiconductor layer, an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually a transparent electrode) disposed on the P-type semiconductor layer. and an N-type electrode disposed on the N-type...

AI Technical Summary

Problems solved by technology

[0004] However, the light extraction efficiency of existing light-emitting diodes (light extraction efficiency usually refers to the efficiency at which the light generated in the active layer is released from the inside of the light-emitting diode) is low, mainly due to the semiconductor (usually gallium nitride) The refractive index is greater than that of air, and the large-angle light from the active layer is totally reflected at the interface between the semiconductor and the air, so that most of the large-angle light is confined inside the light-emitting diode until it is dissipated by heat, etc.

This is very bad for light emitting diodes

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