Blankmask and photomask using the same

Abstract

Provided is a blankmask for a hardmask. In the blankmask, a hard film is formed by appropriately controlling contents of nitrogen and carbon therein to reduce a deviation in a critical dimension caused when an etch process is performed. A metal film is formed to a thin thickness by increasing a content of metal in a light-shielding film and reducing a content of metal in an anti-reflective film. Thus, resolution, pattern fidelity, and chemical resistance of the metal film may be improved. Also, the metal film and the hard film are formed such that a reflectivity contrast therebetween is high, thereby allowing the hard film to be easily inspected. Accordingly, the blank mask for a hardmask may be applied to a dynamic random access memory (DRAM), a flash memory, or a micro-processing unit (MPU) to have a half-pitch of 32 nm or less, and particularly, a critical dimension of 22 nm or less.

Description

[0001] The present application claims priority and rights based on Korean Patent Application No. 2011-0105833 filed on October 17, 2011, the disclosure of which is incorporated herein by reference in its entirety. technical field [0002] The present invention relates to a blank mask for a photomask used in the manufacture of semiconductor elements, a photomask, and a method for manufacturing the photomask, and more particularly, the present invention relates to A blank mask for a photomask, and a photomask using the blank mask, the blank mask being thin and formed of a metal film and a hard film having different reflectivities, thereby measuring Critical dimension (CD) and inspection of defects in it. Background technique [0003] As semiconductor devices become finer, their performance and functions (eg, high operating speed, low power consumption, etc.) are improved and their manufacturing costs are reduced. Therefore, there is an increasing need to manufacture finer sem...

AI Technical Summary

Problems solved by technology

[0011] Second, the resolution and fidelity of the photomask are limited by the thickness of the metal film

Therefore, there is a limit to forming the metal film thin

[0014] Third, it is difficult to inspect the hard film and metal film

However, when the metal film 20 is formed thin to solve the above-mentioned problems, the reflectance of light from the metal film 20 increases at the inspection wavelength.

In this case, when the hard coat pattern 30a having a thin thickness is used, the reflectance contrast may decrease.

Images