Method of inspecting memory cell

Abstract

A method of inspecting a memory cell is provided, including: providing a semiconductor substrate with a capacitor formed therein and a transistor formed thereon, wherein the transistor is electrically connected to the capacitor; inspecting a size of a top surface of the capacitor and a pitch between the capacitor and the transistor electrically connected thereto by an optical measuring system, thereby obtaining a first measurement data and a second measurement data; and comparing the first and second measurement data with designed specifications of the capacitor and transistor, thereby determining functionality of the memory cell comprising the capacitor and the transistor.

Description

technical field [0001] The present invention relates to a detection technology of a semiconductor device, and in particular to a detection method of a memory cell of a dynamic random access memory device (DRAM device). Background technique [0002] A dynamic random access memory device (DRAM device) is a volatile memory device. Storage of digital data in a DRAM device is performed by charging and discharging a capacitor in the DRAM device. And when the power supplied to the DRAM device is turned off, the data stored in the memory cells in the DRAM device will completely disappear. A memory cell of a DRAM device usually includes at least a field effect transistor (FET) and a capacitor. The capacitors are used to store signals in memory cells of the DRAM device. [0003] There are usually off-state currents in the memory cells of the DRAM device, which affects the function of the memory cell and reduces the yield of the DRAM device including the memory cell. Therefore, ele...

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Problems solved by technology

However, the above-mentioned related electrical measurements are usually performed after the interconnecting contacts and bitlines are formed, and these interconnecting contacts and bitlines are formed after the transistors and capacitors are fabricated, so they are not Impossible to detect the function of memory cells in real time and may increase related manufacturing costs

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