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An n-type silicon substrate plus organic crystal double-sided heterojunction solar cells

A technology of solar cells and organic crystals, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as affecting the life of cells

Active Publication Date: 2015-11-25
ZHEJIANG JINBEST ENERGY SECIENCE & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because the formation of crystals is formed at high temperature, the doped film can be at high temperature or sub-high temperature, and the quality of CVD at medium temperature will affect the life of the entire cell

Method used

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  • An n-type silicon substrate plus organic crystal double-sided heterojunction solar cells
  • An n-type silicon substrate plus organic crystal double-sided heterojunction solar cells

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Embodiment Construction

[0012] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

[0013] Example. An N-type silicon substrate plus an organic crystal double-sided heterojunction solar cell, such as figure 1 Shown, comprise N-type silicon substrate N (Si), N-type silicon substrate both sides are all provided with suede 6, the upper surface of N-type silicon substrate realizes boron phosphorus layered gradient diffusion doping, and separates each layers are separated to form an IP + IN structure, the back is directly cleaned and diffused with phosphorus, and then P-type BWB organic crystals are deposited at low temperature8. Number 5 is the SiN anti-reflection coating. IN + P structure. The N-type silicon substrate plus an organic crystal double-sided heterojunction solar cell, the top N-type doped layer is printed with a front electrode 3 and then covered with an EVA layer 7,...

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Abstract

The invention discloses an N type silicon substrate and organic crystal double-face heterojunction solar battery type which comprises an N type silicon substrate, boron phosphorus layering gradient diffusion mixture is conducted on the upper surface of the N type silicon substrate, and all layers are separated by separation layers I to form an IP+IN structure. Back surface is directly cleaned, phosphorus diffusion is conducted, and P type BWB organic crystal lower-temperature deposition is conducted. The IP+IN structure is formed through phosphorus diffusion organic crystal BWB (P type) layering deposition.

Description

technical field [0001] The invention relates to a double-sided solar cell, in particular to an N-type silicon substrate plus an organic crystal double-sided heterojunction solar cell. Background technique [0002] Under the energy crisis, the photovoltaic industry has developed rapidly. The development of photovoltaic theory and technology is gradually becoming mature, and the key to further promoting photovoltaic applications is to improve the photoelectric conversion efficiency of batteries and reduce battery costs. HIT (physically speaking, PIN junction) batteries on Si substrates have been vigorously developed in Sanyo Corporation of Japan. It is a "heterojunction" (HIT junction) battery in which a thin layer of amorphous Si is grown on crystalline Si. The process temperature is actually a medium temperature process. Although the conversion efficiency is slightly stronger, the life is short. Working under sunlight, it is one of the low-cost and high-efficiency batterie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44
CPCY02E10/549
Inventor 韩元杰李新富吴鹏飞张冰许艳
Owner ZHEJIANG JINBEST ENERGY SECIENCE & TECH