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A kind of LED chip and its manufacturing method

A technology of LED chip and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of difficulty in meeting requirements, corrosion, affecting the light extraction rate and work efficiency of LED chips, etc.

Inactive Publication Date: 2016-03-23
ENRAYTEK OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the high refractive index n (n=2.2-2.4) of the epitaxial structure, a considerable part of the light generated by the LED chip is totally reflected on the light-emitting surface, and is confined in the waveguide structure formed by the light-emitting surface and the reflective layer. Ejection forms effective luminescence, which affects the light extraction rate and work efficiency of the LED chip
[0004] At present, the industry has developed various technical means to improve the light extraction rate and work efficiency of LED chips, such as patterned substrates, epitaxial layer sidewall etching, photonic crystals and other technologies, but it is still difficult to meet the requirements

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  • A kind of LED chip and its manufacturing method
  • A kind of LED chip and its manufacturing method
  • A kind of LED chip and its manufacturing method

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Embodiment Construction

[0025] It has been mentioned in the background art that a considerable part of the light generated by the existing LED chip is limited inside the chip due to total reflection and cannot be emitted to form effective light emission, which affects the light extraction rate and working efficiency of the LED chip.

[0026] To this end, the present invention provides an LED chip and a manufacturing method thereof, wherein an epitaxial layer is formed on one side of a sapphire substrate, and prisms arranged in an array are formed on the other side of the sapphire substrate, and A reflective layer is formed on the side on which the truncated truncated trusses are formed. In this way, the exit angle of light on the surface of the LED chip is changed through the secondary reflection on the reflective layer, and the probability of total reflection is reduced, thereby achieving the purpose of increasing the light extraction rate.

[0027] The present invention will be described in more de...

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Abstract

Provided are an LED chip and a manufacturing method thereof. The method for manufacturing the LED chip comprises: forming an epitaxial layer (102) on one side of a sapphire substrate (101); forming prismoids (201) disposed in an array on the other side of the sapphire substrate; and forming a reflecting layer (105) on the side where the prismoids are formed, of the sapphire substrate. In this manner, an emergence angle of light on the surface of the LED chip is changed by means of secondary reflection on the reflecting layer; the reflecting layer and the light-emitting surface of the LED cannot form a waveguide structure; and the probability of total reflection is reduced, thereby achieving the objective of improving the light precipitation rate.

Description

technical field [0001] The invention relates to the technical field of LED manufacturing, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] Green environmental protection is an important trend in the development of modern lighting. The birth and development of LED technology is triggering the second lighting revolution. Compared with traditional light sources, LEDs have the advantages of long life, high luminous efficiency, low power consumption, small size, and free integration. In outdoor display, landscape lighting, TV backlight, indoor lighting and other application fields, it gradually replaces traditional light sources and becomes the mainstream. At present, substrate materials commonly used in LED manufacturing include sapphire, silicon carbide (SiC), silicon (Si), and the like. Among them, the sapphire substrate has been widely used in the LED manufacturing industry due to its suitable price and mature processing technol...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10H01L33/00
CPCH01L33/20H01L33/46
Inventor 汪洋
Owner ENRAYTEK OPTOELECTRONICS