Unlock instant, AI-driven research and patent intelligence for your innovation.

Nozzle head

A nozzle head, nozzle technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as complex structure

Active Publication Date: 2013-05-01
青岛四方思锐智能技术有限公司
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, the nozzle tip does not provide a uniform gas supply over the entire length of the precursor nozzle, or across the output face of the nozzle tip
Moreover, because each of the nozzles has an inlet and an outlet, the structure is complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nozzle head
  • Nozzle head
  • Nozzle head

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Figure 1A A cross-sectional view of a specific embodiment of an apparatus is shown for subjecting a surface 4 of a substrate 6 to a continuous surface reaction of at least a first precursor A and a second precursor B according to the principle of ALD. The first and second precursors A and B can be any gaseous precursor used in ALD, such as ozone, trimethylaluminum (TMA), water, titanium tetrachloride (TiCl 4 ), diethylzinc (DEZ), or the precursor may also be a plasma, such as ammonia, argon, oxygen, nitrogen, hydrogen, or carbon dioxide plasma. The apparatus includes a process chamber 26 having a gaseous environment 14 therein. The gaseous environment 14 may include an inert gas such as nitrogen, or dry air, or any other gas suitable for use as purge air in an ALD process. In addition, plasmas can be used for flushing eg nitrogen or argon plasmas. Flushing gas herein also includes plasma. A source of flushing gas is connected to the processing chamber 26 for supplyi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a nozzle head (2) for subjecting a surface (4) of a substrate (6) to successive surface reactions of at least a first precursor (A) and a second precursor (B). The nozzle head (2) comprising two or more elongated precursor nozzles (8, 10) for subjecting the surface (4) of the substrate (6) to the first and second precursors (A, B). According to the present invention the nozzle head (2) comprises on the output face (5) precursors nozzles (8, 10), purge gas channels (12) and the discharge channels (42, 46) in succession in the following order: at least a first precursor nozzle (8), a first discharge channel (42), purge gas channel (12), a second precursor nozzle (10), a second discharge channel (46) and a purge gas channel (12), optionally repeated a plurality of times.

Description

【Technical field】 [0001] The invention relates to a nozzle head for subjecting a substrate surface to a continuous surface reaction of at least a first precursor and a second precursor, in particular to a nozzle head according to the preamble of claim 1 . The invention also relates to a device according to the preamble of claim 20 . 【Background technique】 [0002] In the prior art, several types of devices, nozzle heads, and nozzles are used to subject a substrate surface to successive surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition (ALD). In the application of ALD, two gaseous precursors are generally introduced into the ALD reactor in various stages. The gaseous precursor effectively reacts with the substrate surface resulting in deposition of a growth layer. The precursor stage is typically followed by or separated by an inert gas flush stage which removes excess precursor from the substrate s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45563C23C16/545C23C16/45551
Inventor P·索伊尼宁R·恩霍尔姆
Owner 青岛四方思锐智能技术有限公司