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A kind of preparation method of Gan-based light-emitting diode chip unit cell

A light-emitting diode and chip technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of GaN difficult to etch clean devices, device failure, etc., and achieve the effect of improving luminous efficiency and simple process

Inactive Publication Date: 2016-01-20
EPILIGHT TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for preparing a GaN-based light-emitting diode chip unit cell, which is used to solve the difficulty in etching the GaN between the packages of the convex PSS in the prior art. And lead to the direct connection inside the device, so that the whole device fails

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  • A kind of preparation method of Gan-based light-emitting diode chip unit cell
  • A kind of preparation method of Gan-based light-emitting diode chip unit cell
  • A kind of preparation method of Gan-based light-emitting diode chip unit cell

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Embodiment Construction

[0024] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0025] see Figure 2 to Figure 6 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention relates to a preparation method for GaN-based light emitting diode (LED) chip unit cells. An LED luminous epitaxial layer is prepared on a protruded patterned sapphire substrate (PSS), the LED luminous epitaxial layer is conducted deep etching through controlling the parameters of inductively coupled plasma (ICP) and by using photoresist and a SiO2 layer as covering films, and thus the LED unit cells of complete separation are formed. According to the preparation method for the GaN-based chip unit cells, the obtained LED unit cells can achieve complete separation, the number and the size of the unit cells can be determined according to the demands of different input voltages, optimization can be conducted to each unit cell, so that good current distribution can be obtained, and thus luminous efficiency is improved. The preparation method for the GaN-based chip unit cells is simple in process and suitable for industrial production.

Description

technical field [0001] The invention relates to a preparation method of a light-emitting diode, in particular to a preparation method of a GaN-based light-emitting diode chip unit cell. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. [0003] For the design of high-power LEDs, most manufacturers currently focus on large-size single LEDs with low voltage. There are two methods: one is the ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 朱广敏郝茂盛张楠齐胜利
Owner EPILIGHT TECH