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Structure of LED and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as complicated manufacturing processes, and achieve the effects of reducing volatilization, stabilizing voltage, and optimal luminous intensity

Active Publication Date: 2008-08-06
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of this TS AlGaInP LED is that the manufacturing process is too complicated, and it usually has a high resistance characteristic of a non-ohmic contact at the bonding interface

Method used

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  • Structure of LED and its manufacturing method
  • Structure of LED and its manufacturing method
  • Structure of LED and its manufacturing method

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Embodiment Construction

[0042] The invention discloses a light emitting diode structure and a manufacturing method thereof.

[0043] Such as Figure 1A As shown, the epitaxial structure of the light-emitting diode of the present invention includes an N-type gallium arsenide (GaAs) substrate 26, an etching stop layer (Etching Stop Layer) 24 and an N-type aluminum gallium indium phosphide (Al X Ga 1-x ) 0.5 In 0.5 The lower cladding (Cladding) layer 22 of P and aluminum gallium indium phosphide (Al x Ga 1-X ) 0.5 In 0.5 P active layer (Active Layer) 20, P-type aluminum gallium indium phosphide (Al x Ga 1-x ) 0.5 In 0.5 The upper cladding layer 18 of P and the P-type ohmic contact epitaxial layer (Ohmic Contact Epitaxial Layer) (ohmic contact epitaxial layer) 16. Then, form the P-type ohmic contact metal electrode layer on the P-type ohmic contact epitaxial layer 16 with conventional technology (first ohmic contact metal electrode layer) 28 . Subsequently, a mirror protection layer 30 is dep...

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Abstract

Metal base plate with high conductivity and high reflectance is adopted in the invention instead of traditional extinctive gallium arsenide base plate, and after diodes are made, two adjacent LED are connected in series through semiconductor fabricating process. Mirror protective layer is adhibited in order to protect metal reflecting layer p and n poles, in which one is higher and the other is lower, of epitaxy chip of LED so as to form LED with p and n poles being at same side. Trench at joint place between two adjacent epitaxy chips of LED is etched out, and a dielectric layer is filled into the trench in order to protect sidewall of adjacent LED. The invention raises luminous efficiency of LED, and increases luminous intensity.

Description

Technical field: [0001] The invention relates to a structure of a light emitting diode (Light Emitting Diode; LED) chip and a manufacturing method thereof. In particular, it relates to the structure and manufacturing method of aluminum gallium indium phosphide (AlGaInp) and aluminum gallium arsenide light-emitting diodes with p and n electrodes in the same direction. Background technique: [0002] The traditional aluminum gallium indium phosphide light-emitting diode has a double heterostructure (Double Heterostructure; DH), and its structure is shown in Figure 5. It is grown on an n-type gallium arsenide (GaAs) substrate (Substrate) 3 with an aluminum content 70%-100% n-type (Al x Ga 1-x ) 0.5 In 0.5 P lower cladding layer 4, one (Al x Ga 1-x ) 0.5 In 0.5 P active layer 5, a p-type (Al) with an aluminum content of 70%-100% x Ga 1-x ) 0.5 In 0.5 The upper cladding layer 6 of P, and a p-type high energy gap current spreading layer (CurrentSpreading Layer) 7, the m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 林锦源杜全成
Owner EPISTAR CORP