Unlock instant, AI-driven research and patent intelligence for your innovation.

A 1kΩ and 100Ω standard resistor

A standard resistor and circuit technology, applied in the direction of measuring electricity, measuring electrical variables, and components of electrical measuring instruments, can solve problems such as high environmental requirements and cumbersome operations, and achieve low environmental requirements, small relative deviation, and easy realization Effect

Active Publication Date: 2016-10-05
NAT INST OF METROLOGY CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For this reason, the technical problem to be solved by the present invention lies in the method of transferring the quantized Hall resistance to the standard resistance of the integer value with high precision in the prior art, which has high environmental requirements and cumbersome operation. The present invention provides an environment-friendly Low-demand, easy-to-implement 1kΩ and 100Ω standard resistors that can convert quantized Hall resistance into integer values ​​with high precision

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A 1kΩ and 100Ω standard resistor
  • A 1kΩ and 100Ω standard resistor
  • A 1kΩ and 100Ω standard resistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] This embodiment provides a 1kΩ standard resistor, such as figure 1 As shown, it includes a first circuit, a second circuit and a third circuit connected in parallel.

[0030] Wherein the first circuit is composed of 12 parallel quantized Hall devices.

[0031] The second circuit is composed of three series-connected quantized Hall devices and two parallel-connected quantized Hall devices connected in series.

[0032] The third circuit is composed of one quantized Hall device, two paralleled quantized Hall devices and nine paralleled quantized Hall devices connected in series.

[0033]As a preferred implementation mode, the 1kΩ standard resistance described in this embodiment, the quantized Hall device is based on gallium arsenide as the substrate, and is grown on the gallium arsenide substrate by molecular beam epitaxy Two-dimensional electron gas structure formed by GaAs-AlGaAs with high mobility.

[0034] As a preferred embodiment, for the 1kΩ standard resistance d...

Embodiment 2

[0043] This embodiment provides a 100Ω standard resistor, such as figure 2 As shown, it includes a first circuit, a second circuit and a third circuit connected in parallel.

[0044] The first circuit is composed of 127 parallel quantized Hall devices.

[0045] The second circuit is composed of three series-connected quantized Hall devices and four parallel-connected quantized Hall devices connected in series.

[0046] The third circuit is composed of 5 series-connected quantized Hall devices, 2 parallel-connected quantized Hall devices, 8 parallel-connected quantized Hall devices and 32 parallel-connected quantized Hall devices in series.

[0047] As a preferred implementation mode, the 100Ω standard resistance described in this embodiment, the quantized Hall device is based on gallium arsenide as the substrate, and is grown on the gallium arsenide substrate by molecular beam epitaxy Two-dimensional electron gas structure formed by GaAs-AlGaAs with high mobility.

[0048]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to 1kohm and 100ohm standard resistors. The 1kohm standard resistor comprises a first circuit, a second circuit and third circuit which are connected in parallel. The first circuit is composed of 12 quantized Hall devices which are connected in parallel. The second circuit is composed of 3 series-connected quantized Hall devices and 2 parallel-connected quantized Hall devices which are connected in series. The third circuit is composed of one quantized Hall devices, 2 parallel-connected quantized Hall devices and 9 parallel-connected quantized Hall devices which are connected in series. According to the structure of the 1kohm standard resistor, ratio of the maximum current to the minimum current passing through the quantized Hall devices is only 14.5, only 29 quantized Hall devices are used by the structure of the 1kohm standard resistor and relative deviation of the structure of the 1kohm standard resistor is only 3.42E-08 so that the invention provides the structure of the 1kohm standard resistor which is optimal in current distribution, minimum in the number of the quantized Hall devices and quite low in relative deviation.

Description

technical field [0001] The invention relates to a standard resistor of 1kΩ and 100Ω. Specifically, it concerns a 1kΩ and 100Ω standard resistor based on the quantized Hall effect. Background technique [0002] Before the first half of the 20th century, countries established classic measurement benchmarks. These measurement benchmarks are generally based on the principles of classical physics and realized with some kind of particularly stable physical objects, so they are called physical benchmarks. The voltage unit and resistance unit are the basic units in electrical measurement, and the physical reference corresponding to the resistance unit is a set of standard resistance coils stored in the Paris International Bureau of Weights and Measures, and the average value of its resistance value is used to maintain the resistance unit 1Ω. Once every three years, countries send their own standard resistances to Paris for comparison with the resistance benchmark of the Internatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R1/28
Inventor 钟青李劲劲王雪深钟源鲁云峰赵萌珂
Owner NAT INST OF METROLOGY CHINA