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Light-emitting element

A light-emitting element and cladding layer technology, which is applied to electrical components, semiconductor devices, circuits, etc., can solve the problems that the process conditions are not easy to control, the process is not easy to control, and the magnesium doping is easy to have a memory effect, etc., and the process is easy to control. Effect

Pending Publication Date: 2022-04-15
兆劲科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The window layer of a traditional LED is a p-type window layer doped with magnesium, which is 9.0x10 in order to improve the conductivity 17 atoms / cm 3 The doping concentration of magnesium (Mg) is doped, but the magnesium doping concentration of the p-type window layer has its limit, and the upper limit of the magnesium doping concentration can only reach 3.0x10 18 atoms / cm 3
That is to say, the p-type window layer doped with magnesium in the current LED cannot further reduce the resistance
In addition, another problem with doping with magnesium is that the use of magnesium doping tends to have a memory effect, which makes it difficult to control the process conditions such as maintaining the background environment of the reaction chamber and setting parameters of the concentration in the epitaxy process
[0004] The p-type window layer is accompanied by a p-type upper electrode, which is a p-type ohmic contact layer, and is usually doped with carbon (C) at a high doping concentration to achieve low resistance requirements, such as 1.0x10 19 atoms / cm 3 , but the high carbon doping concentration is not easy to control in the process

Method used

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Examples

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Embodiment 1

[0028]

[0029]

[0030] Compared with Example 1 (Table 2) of the light-emitting element 100 of the present invention and Comparative Example 1 (Table 1) of the traditional LED, Example 1 is between the upper cladding layer and the window layer of Comparative Example 1, and more settings are added in Example 1. Tunneling junction layer TJ. Corresponding to Comparative Example 1, Example 1 has the following advantages: (1) The tunnel junction layer TJ of Example 1 transposes the p-type window layer of Comparative Example 1 into the n-type window layer of Example 1 Layer (aforesaid window layer 18), because the resistance of n-type window layer is much smaller than the resistance of p-type window layer, so the window layer 18 of embodiment 1 has low resistance, so window layer 18 has better current distribution effect, Thus, the luminous efficiency of Example 1 was improved. (2) Since the window layer 18 of Example 1 is an n-type window layer, the upper electrode 19 is al...

Embodiment 2

[0038]

[0039]

[0040]Embodiment 2 is to convert the n-i-p semiconductor junction form of traditional LED into p-i-n form. The embodiment 2 (Table 3) of the light-emitting element 100 of the present invention is compared with the traditional LED Comparative Example 1 (Table 1). Embodiment 2 is in Comparative Example Between the DBR layer of 1 and the lower cladding layer, the tunnel junction layer TJ is additionally provided in the embodiment 2. Corresponding to Comparative Example 1, Example 2 has the following advantages: (1) The tunnel junction layer TJ of Example 2 transposes the p-type window layer of Comparative Example 1 into the n-type window layer of Example 2 Layer (aforesaid window layer 18), because the resistance of n-type window layer is much smaller than the resistance of p-type window layer, so the window layer 18 of embodiment 2 has low resistance, so window layer 18 has better current distribution effect, Thus, the luminous efficiency of Example 2 was...

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Abstract

The invention provides a light-emitting element. The light-emitting element comprises a substrate, a tunneling junction layer, a lower cladding layer, a lower limiting layer, an active layer, an upper limiting layer, an upper cladding layer, a window layer and an upper electrode which are sequentially formed from bottom to top. According to the invention, the window layer and the upper electrode are converted from the p-type of a traditional LED to the n-type of the invention by using the tunneling junction layer, and the resistance of the n-type window layer is much smaller than that of the p-type window layer, so that the window layer of the light-emitting element provided by the invention has low resistance, thereby having a better current distribution effect and effectively improving the light-emitting efficiency. And the resistance of the n-type upper electrode is much smaller than that of the p-type upper electrode, so that compared with the p-type upper electrode of the traditional LED, the n-type upper electrode of the light-emitting element disclosed by the invention is more beneficial to ohmic contact.

Description

technical field [0001] The invention relates to the technical field of optical semiconductors, in particular to a light emitting element. Background technique [0002] Optical semiconductor elements, such as light-emitting elements, include light-emitting diodes (Light-emitting diodes, LEDs) and laser diodes (Laser Diodes, LDs). Light-emitting elements form p-n junctions or p-i-n junctions on semiconductor substrates using epitaxy technology , in order to achieve the purpose of luminescence. In the prior art, light-emitting elements (such as LEDs) are formed by epitaxy, and their structure includes, from bottom to top, a substrate (Substate), a distributed Bragg reflector (distributed Braggreflector, DBR) layer, and a lower cladding layer ( lower cladding layer), lower confinement layer, active layer, upper confinement layer, upper cladding layer and window layer. There are also two contact layers (Contact) such as the lower electrode (electrode) and the upper electrode. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14
Inventor 欧政宜林志远纪政孝
Owner 兆劲科技股份有限公司