Edge-emitting semiconductor laser element, manufacturing method thereof and crystal strip with edge-emitting semiconductor laser element
A technology for laser components and manufacturing methods, applied to semiconductor lasers, laser parts, lasers, etc., capable of solving the problems of increasing the manufacturing man-hours of the edge-emitting semiconductor laser element 10 and increasing the manufacturing cost of the edge-emitting semiconductor laser element 900, etc.
Active Publication Date: 2013-06-05
TRUE LIGHT
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[0006] However, the purchase and storage of the plurality of spacers 80 increases the manufacturing cost of the edge-firing semiconductor laser device 900, and stacking and separating the plurality of crystal bars 90 and the plurality of spacers 80 increases the cost of the edge-firing semiconductor laser device 900. Manufacturing man-hours of the laser element 10
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[0071] The objects, features and advantages of the present invention will be better understood by the following illustrative and non-limiting detailed description of preferred embodiments of the present invention with reference to the accompanying drawings, in which the same reference Numerals are for the same or similar elements.
[0072] Cooperate with reference figure 2 , is a flow chart of the manufacturing method of the edge-firing semiconductor laser device according to the first embodiment of the present invention. The fabrication method of the edge-firing laser semiconductor laser element 10 is described in detail as follows:
[0073] In step S500 (see FIG. 3(A) together), a semiconductor substrate 110 is provided. The semiconductor substrate 110 is a wafer and has an upper surface 112 and a lower surface 114 opposite to the upper surface 112 .
[0074] Step S502 , sequentially forming the semiconductor layers 120 needed to form a plurality of edge-firing semiconduct...
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Provided is an edge-emitting semiconductor laser element. The edge-emitting laser element comprises a first end face and a second end face opposite to the first end face. The edge-emitting semiconductor laser element comprises a semiconductor substrate, a semiconductor layer, a first electrode layer, at least one convex column, a first reflecting layer and a second reflecting layer. The semiconductor layer comprises a first covering layer, an active layer and a second covering layer, wherein the first covering layer, the active layer and the second covering layer are sequentially arranged above the semiconductor substrate; and the second covering layer is provided with a ridge-shaped platform. The first electrode layer is arranged on the ridge-shaped platform and the second covering layer, the convex column is arranged above the first electrode layer, and the first reflecting layer and the second reflecting layer are arranged on the first end face and the second end face respectively. When the convex column enables a plurality of edge-emitting semiconductor laser elements to be stacked, every two adjacent edge-emitting semiconductor laser elements form one gap.
Description
technical field [0001] The invention relates to a method for manufacturing a photoelectric element, especially a method for manufacturing a side-firing semiconductor laser diode. Background technique [0002] Semiconductor laser (semiconductor laser) or laser diode (laser diode) has the advantages of small size, low power consumption, fast response, impact resistance, long life, high efficiency and low price, so it is widely used in optoelectronic system products, For example: light wave communication, information system, household appliances, precision measurement and optical fiber communication. [0003] Referring to FIG. 1(A), it is a perspective view of a conventional edge emitting semiconductor laser device. The edge-firing semiconductor laser device 900 includes a semiconductor substrate 902, and a first cladding layer (cladding layer) 904, an active layer (active layer) 906, an The second cladding layer 908 and an upper capping layer 910 ; wherein, the upper capping...
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IPC IPC(8): H01S5/30H01S5/028
Inventor 陈保昇郑聪杰游原振
Owner TRUE LIGHT