Device for growing crystals by the Tira Kyophyll method

Abstract

The invention relates to a device for growing crystals by using a lifting and Kyropoulos method. The device comprises a composite seed crystal rod (2), a crucible (11) and a temperature field regulating unit, wherein the composite seed crystal rod (2) is for clamping seed crystals, wherein the composite seed crystal rod (2) comprises a main water cooling rod (19) and a seed crystal clamp (21) which can be separated from or jointed together with each other; the main water cooling rod (19) and the seed crystal clamp (21) can move up and down separately and rotate positively and reversely; the crucible (11) is used for accommodating a melt for growing crystals; the temperature field regulating unit comprises a heating body (7), an upper thermal insulation cover (8), a side thermal insulation layer (3) and a lower thermal insulation layer (10); the upper thermal insulation cover (8) is positioned above the crucible (11), and can ascend and descend; and the heating body (7) is positioned between the crucible (11) and the side thermal insulation layer (3).

Description

technical field [0001] The invention belongs to the technical field of crystal growth and relates to a crystal growth device. In particular, it relates to a device for growing crystals by the pulling kyophyll method. Background technique [0002] Sapphire has many excellent properties and is widely used in many fields of national defense, scientific research and civilian use. In recent years, with the development of the LED industry, sapphire is the most feasible substrate material for its commercialization, and its application market has expanded rapidly. How to grow sapphire crystals accurately and controllably has always been a topic of concern to crystal growth researchers. At present, the methods for growing high-quality and large-sized sapphire crystals mainly include: pulling method, Kyropoulos method, temperature gradient method, heat exchange method, etc. [0003] Among them, the "necking" process in the pulling method can eliminate dislocations inside the seed c...

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Problems solved by technology

[0006] In view of the above problems, the object of the present invention is to overcome the problem that the pulling method equipment and the Kyropoulos method equipment are difficult to be compatible, and to provide a method for crystal growth that facilitates the transition between the pulling method seeding shouldering process and the Kyropoulos equal diameter process and devices, so that the advantages of the pulling method and the Kyropoulos method are combined in one device for crystal growth to obtain high-quality, large-sized crystals

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