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Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell

A technology of solar cells and semiconductors, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, semiconductor devices, etc., can solve problems such as complex needs, high cost, and recombination loss, and achieve high efficiency and low cost

Active Publication Date: 2013-06-12
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV +1
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Problems solved by technology

[0008] Some of the above methods require complex and costly masking steps or result in emitter profiles that still have significant recombination losses due to the profile change process, reducing efficiency

Method used

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  • Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell
  • Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell
  • Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell

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Embodiment Construction

[0073] 1 and 2 each show a detail of a semiconductor substrate 1 in the form of a silicon wafer. semiconductor substrate with N A =1.5E16cm -3 The p-doped and extended to the left and right respectively. The semiconductor substrate 1 has a thickness of 200 μm and is approximately square with a side length of 15 cm.

[0074] The same reference numerals in Fig. 1 and Fig. 2 denote the same parts.

[0075] In a first embodiment of the method according to the invention shown in FIG. 1 , in method step A a doping layer 2 is applied to the upper front side of the semiconductor substrate 1 which is designed for the solar cell to be produced. light incident.

[0076] The doped layer 2 is deposited by chemical vapor deposition (CVD) and made of SiO x : P (phosphosilicate glass PSG), that is, contains phosphorus as a dopant, and the concentration of phosphorus is 4 to 8% by weight.

[0077] In method step B, local heating by means of the laser beam L produces within a short time i...

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Abstract

The invention relates to a method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method comprises the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate by means of liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E); removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

Description

technical field [0001] The invention relates to a method according to the preamble of claim 1 for producing selectively doped structures on a semiconductor substrate for the production of photovoltaic solar cells. Background technique [0002] Photovoltaic solar cells are planar semiconductor elements in which the generation of electron-hole pairs is obtained by means of incident electromagnetic radiation and the charge carriers are separated at at least one pn junction so that a potential difference arises between at least two electrical contacts of the solar cell And power can be drawn from the solar cell through an external circuit connected to these contacts. [0003] A typical solar cell comprises a base-doped semiconductor substrate in which at least one emitter-doped emitter region is formed, the emitter doping being opposite to the base doping such that between the base region and The aforementioned pn junction is formed between the emitter regions. The base region...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L21/2254H01L21/268H01L31/022425H01L31/068Y02E10/547H01L31/18
Inventor 乌尔里希·耶格尔D·比罗安-克里斯汀·沃克约翰尼斯·塞非塞巴斯提安·麦克A·沃尔夫R·普罗伊
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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