Insulated gate bipolar transistor (IGBT) module

A welding area and substrate technology, which is applied to electrical components, electrical solid devices, circuits, etc., can solve the problems of complex process adjustment, unstable soldering layer void rate, and difficult technical control of soldering layer void rate

Inactive Publication Date: 2013-06-19
XIAN YONGDIAN ELECTRIC
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AI Technical Summary

Problems solved by technology

[0005] For the existing bottom plate design, the welding area between the bottom plate and the DBC substrate is not greater than 1cm 2 The current welding technology can easily meet the technical standard requirements for the void rate of the welding layer, and for welding areas larger than 1cm 2 Large-area welding, in the actual welding process, the void rate of the weld layer often changes, and the void rate of the weld layer is unstable. If only by improving the welding process technology level and reducing the cleanliness of the bottom plate welding surface In order to meet the technical standard requirements of small solder layer void rate, the process adjustment process is complicated, and the technical control of reducing the solder layer void rate is difficult

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  • Insulated gate bipolar transistor (IGBT) module
  • Insulated gate bipolar transistor (IGBT) module
  • Insulated gate bipolar transistor (IGBT) module

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Embodiment Construction

[0024] The embodiment of the present invention discloses an IGBT module, which includes a DBC substrate and a bottom plate welded to the substrate by solder, a welding area is defined on the welding surface of the bottom plate, and the welding area is divided into a plurality of area units by grooves, The area of ​​each area unit is less than or equal to 1 / 100 of the area of ​​the entire welding area.

[0025] Compared with the base plate (original base plate) in the prior art, the IGBT module base plate (grid base plate) designed in this application does not make any changes to the overall structural design of the original base plate, and the main difference from the original base plate design Yes, the grid design is carried out on the surface of the welding area of ​​the original base plate, specifically, a certain shape of grid grooves is carried out on the surface of the welding area of ​​the base plate, and the grooves in the welding area of ​​the base plate are divided in...

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Abstract

The invention discloses an insulated gate bipolar transistor (IGBT) module which comprises a direct bonded copper (DBC) substrate and a base plate welded with the DBC substrate through welding materials. A welding area is formed on a welding surface of the base plate in a defined mode. The welding area is divided into a plurality of area units through grooves. The area of each area unit is smaller than or equal to a hundredth of the area of the whole welding area. The IGBT module can reduce a void rate of a welding layer between the base plate and the DBC substrate of the IGBT module, improves welding quality and ensures stability of the welding quality.

Description

technical field [0001] The invention belongs to the field of electronic manufacturing, and in particular relates to an IGBT module, in particular to a bottom plate of the IGBT module. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) modules are mainly used in the main circuit inverter of the frequency converter and all inverter circuits, that is, in DC / AC conversion. Today's new power electronic devices represented by IGBT are the core switching devices of high-frequency power electronic circuits and control systems, and have been widely used in electric locomotives, high-voltage power transmission and transformation, electric vehicles, servo controllers, UPS, switching power supplies, chopping Wave power and other fields, the market prospect is very good. [0003] As the core device of the power electronic system, the IGBT module's performance parameters directly determine the performance and reliability of the power electronic system. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L23/13H01L23/367
Inventor 王豹子
Owner XIAN YONGDIAN ELECTRIC
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