VPNP device in a kind of sige HBT process and manufacturing method thereof

Abstract

The invention discloses a manufacturing method of a VPNP device in a SiGe HBT technology. The manufacturing method of the VPNP device in the SiGe HBT technology includes the steps of: manufacturing shallow trench isolations on a P-shaped substrate, implanting to form P-buried layers and N-buried layers at the bottom of the shallow trench isolations, and implanting to form a deep N-well; performing secondary P-shaped impurity implanting to form a P-well; growing isolation dielectric, etching to remove part of the isolation dielectric, opening the window of an emitter region and growing a SiGe epitaxy; after the etching, growing isolation dielectric again, opening the window of a polycrystalline silicon layer, depositing the polycrystalline silicon layer and removing part of the polycrystalline silicon layer and the isolation dielectric on the SiGe epitaxy; extracting the P-buried layers and the N-buried layers through deep contact holes to connect with metal connecting wires, and extracting the polycrystalline silicon layer and the SiGe epitaxy through the deep contact holes to connect with the metal connecting wires. The invention further discloses the VPNP device in the SiGe HBT technology. The VPNP device produced by utilizing the manufacturing method of the VPNP device in the SiGe HBT technology can improve the radio frequency characteristics of the device without changing the basic breakdown characteristics of the device, reduce the amplification coefficient of a parasitic NPN (Negative-Positive-Negative) device of a VPNP transistor and reduce a substrate current.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a VPNP device in a SiGe HBT process. The invention also relates to a method for manufacturing a VPNP device in a SiGe HBT process. Background technique [0002] In RF applications, higher and higher device characteristic frequencies are required. Although RFCMOS (RF Complementary Metal Oxide Semiconductor Field-Effect Transistor) can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet the RF requirements, such as very It is difficult to achieve a characteristic frequency above 40GHz, and the research and development cost of advanced technology is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and most compound semiconductors are toxic, it limits its application. SiGe HBT is a good choice for ultra-high frequen...

AI Technical Summary

Problems solved by technology

The manufacturing process of the buried layer in the collector area is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of the collector area is high; 2. The radio frequency capability is limited and the substrate current is high; 3. The deep trench isolation process is complicated and the cost is high

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