Method for preventing the formation of ring-like metal residues on metal interconnect lines

A metal interconnection, metal residue technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as adverse effects, prolonged production cycle, increased production cost, etc., to solve the problem of metal residues , Guarantee the production cycle, improve the quality of the effect

Active Publication Date: 2016-04-27
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, increasing N 2 Although the gas treatment step of O can improve the problem of metal residues, increasing the process steps will lead to prolongation of production cycle, increase of production cost, and may also introduce N 2 O impurity enters the semiconductor device and brings unexpected adverse effects

Method used

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  • Method for preventing the formation of ring-like metal residues on metal interconnect lines
  • Method for preventing the formation of ring-like metal residues on metal interconnect lines
  • Method for preventing the formation of ring-like metal residues on metal interconnect lines

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Embodiment Construction

[0020] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0021] It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. l...

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Abstract

The invention provides a method for preventing a hooped metal residue from being formed on a metal interconnection line. The method comprises the steps that a semiconductor substrate is provided, an aluminum metal layer is formed on the semiconductor substrate by a sputtering method and used for forming a final layer of the metal interconnection line, and the sputtering temperature when the aluminum metal layer is formed is lower than or equal to 250 DEG C. According to the method, since the sputtering temperature when the aluminum metal layer is formed is lowered, the hooped metal residue can be effectively avoided. Compared with the prior art, no processing step is added in the method, so that the original production cycle can be ensured, and the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preventing ring-shaped metal residues from forming on metal interconnection lines. Background technique [0002] When making the last metal layer of a semiconductor device, the aluminum metal layer is usually formed by a sputtering method, and the metal interconnection is formed by an etching process. However, ring-shaped metal residues are easily formed on the surface of the semiconductor device after the etching process. These metal residues are very likely to appear between two metal wires, which will lead to the connection of the metal wires, thereby causing the failure of the semiconductor device. [0003] Usually, the sputtering temperature when the metal layer is formed by sputtering is about 300°C. It is detected by scanning electron microscopy: the grain size of the metal layer is relatively large, and the surface roughness of the metal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768C23C14/34C23C14/14
Inventor 吕淑瑞栾广庆
Owner CSMC TECH FAB2 CO LTD
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