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A modified molybdenum substrate for a high-power thyristor and its preparation method

A technology of thyristor and molybdenum substrate, which is applied in the field of modified molybdenum substrate of high-power thyristor and its preparation, can solve the problems of complex process, difficult control, easy oxidation of molybdenum sheet, etc., and achieve high bonding strength, high yield, good adhesion effect

Inactive Publication Date: 2016-02-03
HOHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The molybdenum sheet used as the support of the silicon substrate of the thyristor is easily oxidized at high temperature, and the voltage drop is unstable, which seriously affects the normal operation of the chip
In order to overcome this defect, the commonly used methods are as follows: one is to coat the metal ruthenium film on the surface of the metal molybdenum sheet, but the bond between the metal ruthenium film coating layer and the metal molybdenum sheet substrate is not strong, and it is easy to peel off after long-term use. problems such as falling and short service life of the coating layer; the second is to heat on the basis of metal ruthenium film plating on the surface of the metal molybdenum sheet to improve the bonding strength between the metal ruthenium film and the metal molybdenum sheet, but because it does not get rid of the metal molybdenum sheet The traditional process of electroplating metal ruthenium film on the surface cannot fundamentally solve the problem of weak bonding between the metal ruthenium film coating layer and the metal molybdenum sheet substrate; the third is to coat the metal molybdenum sheet with multi-layer metal ruthenium film to Improve the bonding strength between metal ruthenium film and metal molybdenum sheet, but there are problems of complicated process, difficult control and difficult guarantee of finished product quality
In addition, the commonly used method of electroplating metal ruthenium film also has environmental protection problems that the electroplating waste solution is difficult to deal with.

Method used

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Experimental program
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Effect test

preparation example Construction

[0012] According to the present invention, a modified molybdenum substrate for a high-power thyristor is prepared by using metal ruthenium ions with a purity greater than 99.0% to form a solid solution with a metal molybdenum sheet to form a ruthenium-molybdenum alloy infiltrated layer on the surface of the metal molybdenum sheet. The preparation method of modified molybdenum substrate of the present invention comprises the steps:

[0013] Step 1, surface pretreatment: use molybdenum sheet with flatness ≤ 5 μm, parallelism ≤ 10 μm and surface roughness Ra ≤ 0.3 μm, use acetone and absolute ethanol to perform ultrasonic cleaning for 15 minutes each, and then blow dry;

[0014] Step 2, solid solution of ruthenium and molybdenum: put the metal molybdenum sheet that has completed the surface pretreatment of step 1 into the vacuum chamber of the ion implanter, and then inject a metal ruthenium ion source with a purity greater than 99.0%, and the metal ruthenium ion and the metal mol...

Embodiment 1

[0016] Embodiment 1, taking the modified molybdenum substrate of making 5 inches of circular high-power thyristor as example, concrete steps are as follows:

[0017] Step 1, surface pretreatment: using a flatness of 4 μm, a parallelism of 10 μm, and a surface roughness of 0.3 μm, a circular metal molybdenum sheet with a diameter of 5 inches was ultrasonically cleaned with acetone and absolute ethanol for 15 minutes, and then air-dried. Prepare solid solution with metal ruthenium ions;

[0018] Step 2, solid solution of ruthenium and molybdenum: put the metal molybdenum sheet that has completed the surface pretreatment of step 1 into the vacuum chamber of the ion implanter, and then inject a metal ruthenium ion source with a purity of 99.0%, and the metal ruthenium ion and the metal molybdenum sheet Solid solution, forming a ruthenium-molybdenum alloy infiltrated layer on the surface of the metal molybdenum sheet, the vacuum degree in the vacuum chamber is 4×10 -3 pa, the acce...

Embodiment 2

[0021] Embodiment 2, taking the modified molybdenum substrate of making 6 inches circular high-power thyristor as example, concrete steps are as follows:

[0022] Step 1, surface pretreatment: Use acetone and absolute ethanol to ultrasonically clean circular metal molybdenum sheets with a flatness of 4 μm, a parallelism of 10 μm, and a surface roughness of 0.3 μm, respectively, with acetone and absolute ethanol for 15 minutes, and then dry them with air. Prepare solid solution with metal ruthenium ions;

[0023] Step 2, solid solution of ruthenium and molybdenum: put the metal molybdenum sheet that has completed the surface pretreatment of step 1 into the vacuum chamber of the ion implanter, and then inject a metal ruthenium ion source with a purity of 99.5%, and the metal ruthenium ion and the metal molybdenum sheet Solid solution, forming a ruthenium-molybdenum alloy infiltrated layer on the surface of the metal molybdenum sheet, the vacuum degree in the vacuum chamber is 4×...

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Abstract

The present invention relates to a modified molybdenum substrate of a high-power thyristor and a preparation method thereof. The modified molybdenum substrate of the high-power thyristor provided by the invention includes a metal molybdenum sheet with flatness <= 5 [mu]m, parallelism <= 10 [mu]m, and surface roughness Ra <= 0.3 [mu]m, and is characterized in that ruthenium metal ions with a purity greater than 99.0% and a metal molybdenum sheet are in solid solution, and a ruthenium-molybdenum alloy permeation layer is formed on the metal molybdenum sheet. The modified molybdenum substrate finished product has the advantages of the ruthenium metal ions and the ruthenium-molybdenum alloy including high bonding strength, good repeatability, high flatness, etc. The present invention provides a preparation method of the modified molybdenum substrate of the high-power thyristor, concretely including the steps of surface pretreatment, ruthenium and molybdenum solid solution, and annealing treatment. The preparation method is simple to implement, has no environmental pollution, and is practical and reliable.

Description

technical field [0001] The invention belongs to the technical field of electronic element processing, and in particular relates to a modified molybdenum substrate of a high-power thyristor and a preparation method thereof. Background technique [0002] Molybdenum is a rare metal with a high melting point. It not only has good mechanical properties such as high strength, high rigidity, and good wear resistance, but also has a similar expansion coefficient to silicon and good thermal and electrical conductivity. Therefore, it is often used It is used as the support body of the thyristor silicon substrate - molybdenum sheet, which plays the role of heat dissipation, protecting the normal operation of the chip and improving the service life of electronic components. At present, high-power thyristors are widely used in locomotive traction and transmission, high-voltage direct current transmission, high-current power supply, industrial transmission and other fields. These fields h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/48
Inventor 吴玉萍高文文李改叶郭文敏王博洪晟
Owner HOHAI UNIV