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Low-temperature double-layer isolation compensating type micro-electromechanical system (MEMS) microwave power sensor

A microwave power and sensor technology, used in thermal power measurement, coatings, instruments, etc., can solve problems such as limiting the scope of application, affecting accuracy, heat dissipation, etc., to improve test accuracy, reduce impact, and achieve temperature Compensation effect

Inactive Publication Date: 2013-07-10
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But the disadvantage is that heat can be dissipated through the substrate and air, with the substrate dissipating the most heat
The output DC voltage has a strong dependence on temperature, especially in low temperature environments, which seriously affects the detection accuracy and limits the scope of application

Method used

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  • Low-temperature double-layer isolation compensating type micro-electromechanical system (MEMS) microwave power sensor
  • Low-temperature double-layer isolation compensating type micro-electromechanical system (MEMS) microwave power sensor
  • Low-temperature double-layer isolation compensating type micro-electromechanical system (MEMS) microwave power sensor

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Embodiment Construction

[0034] Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention Modifications in equivalent forms all fall within the scope defined by the appended claims of this application.

[0035] Such as image 3 As shown, a low-temperature double-layer isolation compensation type MEMS microwave power sensor of the present invention etches two square isolation rings on the periphery of the existing microwave power sensor A. The inner isolation ring 8 is located on the inside, and the outer isolation ring is located on the outer side The distance between the isolation ring 7, the inner isolation ring 8 and the outer isolation ring 7 is 60um. The depth of t...

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Abstract

The invention provides a low-temperature double-layer isolation compensating type micro-electromechanical system (MEMS) microwave power sensor. The technical scheme is that an inner isolating ring and an outer isolating ring are etched on the periphery of a microwave power sensor one, the microwave power sensor is enclosed to define an isolating island, lost heat of an MEMS microwave power sensor in the prior art is further reduced through a substrate, at the same time a first heating circuit and a second heating circuit are arranged on the inner side of the inner isolating ring, a thermal resistance is used to heat, the MEMS microwave power sensor is kept to work under normal temperature, influence of environmental temperature on sensitivity of the MEMS microwave power sensor in the prior art is further reduced, test accuracy of the microwave power sensor is further improved, output voltage of the microwave power sensor one and output voltage of a microwave power sensor two are used to obtain errors of the microwave power sensor in the prior art due to heat loss and the influence of the environmental temperature, the errors are added to a microwave power sensor three with errors to achieve temperature compensation.

Description

technical field [0001] The invention relates to a low-temperature double-layer isolation compensation MEMS microwave power sensor, which belongs to the field of micro-electromechanical systems. Background technique [0002] In the development of microwave field, the power of microwave signal is one of the three parameters of microwave system. Microwave power detection is essential in any microwave research such as radar systems, modern soldier communication systems, vehicle radar, etc. The most common microwave power detector is a microwave power sensor based on the principle of thermoelectric conversion, that is, based on the Seebeck effect of a thermopile, which has the characteristics of fast response and wide frequency band. [0003] Such as figure 1 As shown, the existing MEMS microwave power sensor consists of a coplanar waveguide transmission line 1 , a tantalum nitride resistor 3 , a thermopile 4 , a gallium arsenide substrate 5 and a pressure pad 6 . The coplanar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R21/02G01R3/00B81C1/00
Inventor 廖小平周锐
Owner SOUTHEAST UNIV
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