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A bottom insulation structure of sapphire single crystal furnace

A technology of sapphire single crystal furnace and insulation layer, which is applied in the direction of single crystal growth, single crystal growth, and seed crystal remaining in the molten liquid during growth, which can solve the problems of difficult control of temperature adjustment, unreasonable temperature field, and easy deformation. , to achieve the effect of avoiding too slow heat conduction, continuous temperature adjustment sensitivity, and high use temperature

Active Publication Date: 2016-04-20
HARBIN AURORA OPTOELECTRONICS TECH
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Problems solved by technology

[0004] The purpose of the present invention is to provide a sapphire single crystal furnace that solves the problems that the molybdenum lower heat shield structure used in the traditional Kyropoulos single crystal furnace is easily deformed during use in a high temperature environment, the temperature field is not reasonable enough, and the temperature adjustment is difficult to control. Crystal furnace bottom insulation structure

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  • A bottom insulation structure of sapphire single crystal furnace
  • A bottom insulation structure of sapphire single crystal furnace
  • A bottom insulation structure of sapphire single crystal furnace

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Embodiment Construction

[0027] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] combine figure 1 , the example of this embodiment is the heat preservation structure at the bottom of the micro-pulling sapphire single crystal furnace with cold heart shouldering method. The structure mainly includes two parts. Composed of molybdenum heat shield. combine Figure 2-Figure 4 , The zirconia insulation layer is a hollow circular block with a height h1 of 10mm spliced ​​by four zirconia fiber bricks with an outer diameter of D2=350mm and an inner diameter of D1=61mm. Between adjacent zirconia fiber bricks, three sets of matching semicircular positioning protrusions and positioning grooves with a radius of R1=5mm and R2=5.2mm are uniformly arranged in the radial direction. There are two zirconia ceramic rings 2 for separation between the zirconia insulation layer and the molybdenum heat shield. The structure of the ceramic rings is as follows: ...

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Abstract

The invention provides a bottom heat preservation structure of a sapphire single crystal furnace. The bottom heat preservation structure comprises a zirconium oxide heat preservation layer and a molybdenum heat screen, wherein the zirconium oxide heat preservation layer is formed by assembling zirconium oxide fiber bricks prepared by sintering zirconium oxide fibers and put on the molybdenum heat screen; the molybdenum heat screen is made of a plurality of layers of molybdenum plates; the zirconium oxide heat preservation layer is separated from the molybdenum heat screen by ceramic rings formed by assembling the zirconium oxide fiber bricks; and a plurality of layers of molybdenum plates are assembled and fixed by molybdenum bolts and molybdenum screws. The bottom heat preservation structure solves the problems that a lower molybdenum heat screen used in the conventional kyropoulos method single crystal furnace is easy to deform when being used in a high-temperature environment, the temperature field is unreasonable, the temperature adjustment is difficult to control and the like.

Description

(1) Technical field [0001] The invention relates to a heat field structure in a crystal growth furnace, in particular to a bottom heat preservation structure in a single crystal furnace for growing sapphire by a cold-heart shoulder micro-pulling method. (2) Background technology [0002] Sapphire single crystal, as the widely used blue-light GaN semiconductor substrate, has the advantages of mature epitaxy technology, good device quality, stability at high temperature, high mechanical strength, and easy operation. It has become the GaN-based blue-white light with the best comprehensive performance. LED semiconductor substrate material. The preparation technology of sapphire single crystal includes flame melting method, pulling method, kyropoulos method, crucible drop method, guided mode method, heat exchange method, etc., among which kyropoulos method has been proved by industrialization to be the most suitable for growing large-sized high-quality sapphire single crystal me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B17/00C30B29/20
Inventor 左洪波杨鑫宏丁广博
Owner HARBIN AURORA OPTOELECTRONICS TECH
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