High-temperature-resistant MIM capacitor for microwave internal matching transistor and manufacturing method thereof

Abstract

The invention discloses a high-temperature-resistant MIM capacitor for a microwave internal matching transistor and a manufacturing method of the high-temperature-resistant MIM capacitor and relates to the technical field of integrated circuits and manufacturing methods of the integrated circuits. The high-temperature-resistant MIM capacitor comprises a substrate, a metal lower electrode, an insulating medium layer and a metal upper electrode, wherein the metal lower electrode is fixed on the upper surface of the substrate, the insulating medium layer wraps outside the metal lower electrode, a metal lower electrode extracting hole which penetrates through the insulating medium layer is formed in the insulating medium layer, a lower electrode extracting electrode which is fixedly connected with the metal lower electrode is arranged in the metal lower electrode extracting hole, and the metal upper electrode is fixed on the upper surface of the insulating medium layer. The manufacturing method of the high-temperature-resistant MIM capacitor for the microwave internal matching transistor can avoid that the insulating medium layer is influenced by stress. The high-temperature-resistant MIM capacitor for the microwave internal matching transistor has the advantages of being good in microwave characteristics and high-temperature operating characteristics, and easy to process.

Description

technical field [0001] The invention relates to the technical field of microwave internal matching transistor manufacturing, integrated circuits and integrated circuit manufacturing methods, and in particular to a metal-insulator-metal capacitor and a manufacturing method thereof. Background technique [0002] Microwave high-power transistors have high operating frequency, large die area, relatively low input and output impedances of the die, and parasitic parameters have a serious impact on the performance of the transistor. If it is directly applied to a microwave system connection with a characteristic impedance of 50 ohms, due to serious The mismatch will cause the transistor to fail to achieve high power output, making the performance of the transistor unable to be fully utilized. For this reason, it is an effective way to realize high-power and high-gain output of microwave power transistors by using internal matching networks to increase (transform) the input and outp...

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Problems solved by technology

It can be seen that this method not only uses a large amount of gold, but also has strict requirements on oxidation and silicon wafer corrosion in the process, otherwise it will affect the yield of MOM capacitors

[0004] With the continuous advancement of semiconductor technology, some internal matching capacitors adopt MIM (metal-insulator-metal) structure. MOM capacitors are actually a branch of MIM capacitors. The insulating layer of MIM capacitors is generally formed by dielectric deposition process. , due to the existence of the existing metal layer, the temperature of the deposition medium is generally not very high, so that the compactness of the dielectric layer is affected, and it will also bring adverse consequences to the performance of the MIM capacitor

At the same time, the cutting of traditional MIM capacitors is on the dielectric layer. The dielectric layer will generate a large defect stress through the action of a diamond knife or a grinding wheel scribing knife. After subsequent sintering and other high-temperature processes, the stress will be released, resulting in a Defects such as cracks pose a threat to the long-term stable operation of MIM capacitors, and are also detrimental to the long-term stable and reliable operation of internal matching transistors

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