High-temperature-resistant MIM capacitor for microwave internal matching transistor and manufacturing method thereof
A manufacturing method and internal matching technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the long-term stability of internal matching transistors, the disadvantage of reliable operation, the threat of long-term stable operation of MIM capacitors, and the impact on the yield of MOM capacitors, etc. problems, to achieve the effect of improving reliability and overall yield, excellent microwave characteristics, improving overall electrical performance and reliability and stability
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[0049] Such as Figure 14 As shown, a high-temperature-resistant MIM capacitor for microwave internally matched transistors includes a substrate 1 , a metal lower electrode 2 , an insulating dielectric layer 3 and a metal upper electrode 5 . The metal lower electrode 2 is fixed on the upper surface of the substrate 1, and the outer side of the metal lower electrode 2 is wrapped with an insulating medium layer 3. The insulating medium layer 3 has been subjected to high-temperature annealing treatment and has a penetrating insulating medium layer on it. The metal lower electrode lead-out hole 9 of the layer, the lower electrode lead-out electrode 4 fixedly connected with the metal lower electrode 2 is arranged in the metal lower electrode lead-out hole 9, and the metal upper electrode 5 is fixed on the insulating medium layer 3 on the upper surface.
[0050] Such as Figure 15 As shown, a high-temperature-resistant microwave internal matching transistor MIM capacitor, and Fi...
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