Method and device for improving electrical interference resistance of SNSPD (Superconducting Nanowire Single Photon Detector) system

A technology of electrical interference and ability, applied in the field of optical detection, can solve the problems of reducing response pulse amplitude, affecting signal discrimination, reducing signal-to-noise ratio, etc., achieving the effect of simple operation and improving anti-electrical interference ability

Active Publication Date: 2013-08-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can achieve the effect of anti-electrical interference, but it will reduce the response pulse amplitude (to about 70%) and reduce the signal-to-noise ratio; and when the impedance matching is not good, the electric pulse signal will have a certain reflection signal, which is serious will affect the final signal discrimination

Method used

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  • Method and device for improving electrical interference resistance of SNSPD (Superconducting Nanowire Single Photon Detector) system
  • Method and device for improving electrical interference resistance of SNSPD (Superconducting Nanowire Single Photon Detector) system
  • Method and device for improving electrical interference resistance of SNSPD (Superconducting Nanowire Single Photon Detector) system

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Embodiment 1

[0028] This embodiment provides a method for improving the anti-electric interference capability of the SNSPD system, see figure 2 , The SNSPD system includes a refrigerator, an optical coupling module, a SNSPD device, and a bias module; the bias module mainly includes an isolated voltage source, a bias tree, an amplifier, etc.; the bias tree has a DC port, DC&RF Port, RF port; the DC&RF port of the bias tree is connected to one end of the SNSPD device, and the other end of the SNSPD device is grounded; the method for improving the anti-interference ability of the SNSPD system is: grounding the DC port and the SNSPD device A resistor is connected between the terminals.

[0029] Based on the defects of the prior art, the present invention connects the resistor R0 in parallel with the bias tree (Bias-Tee DC) end of the original bias module. The resistance value of R0 can be selected according to the actual device, for example, 50Ω can be selected.

[0030] The resistance selection p...

Embodiment 2

[0038] This embodiment provides a device for improving the anti-electric interference capability of the SNSPD system, see figure 2 , The SNSPD system includes a refrigerator, an optical coupling module, a SNSPD device, and a bias module; the bias module mainly includes an isolated voltage source, a bias tree, an amplifier, etc.; the bias tree has a DC port, DC&RF Port, RF port; the DC&RF port of the bias tree is connected to one end of the SNSPD device, and the other end of the SNSPD device is grounded; a resistor is connected between the DC port and the ground end of the SNSPD device.

[0039] The SNSPD system also includes an isolation voltage source, a current-limiting resistor, and an amplifier; the positive pole of the isolation voltage source is connected to one end of the current-limiting resistor, and the other end of the current-limiting resistor is connected to the DC port of the bias tree; The RF port of the bias tree is connected to the amplifier; the DC&RF port of th...

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Abstract

The invention provides a method and a device for improving electrical interference resistance of an SNSPD system. The SNSPD system comprises an SNSPD device and a bias tree; the bias tree is provided with a DC (direct current) port, a DC & RF (radio frequency) port and an RF port; the DC & RF port of the bias tree is connected with one end of the SNSPD device, and the other end of the SNSPD device is grounded; and the method for improving the electrical interference resistance of the SNSPD system is as follows: a resistor is connected between the DC port and the grounded end of the SNSPD device. According to the method and the device for improving the electrical interference resistance of the SNSPD system, the operation is simple, the structure of the device is not changed, a filter circuit or a shield is not required to be added, the electrical interference resistance of the system can be improved only by connecting the resistors with appropriate resistance values in parallel, and the cost is low; the shape, the amplitude and the width of a detection electrical pulse signal are not changed; a reflected impulse cannot be produced, so that the device performance is not affected; and the dark counting rate and the quantum efficiency of the detection system are not affected.

Description

Technical field [0001] The invention belongs to the field of optical detection technology, and relates to a method and a device for improving the anti-electric interference capability of the SNSPD system. Background technique [0002] Superconducting Nanowire Single Photon Detector (SNSPD) is an important photodetector, which can realize single photon detection from visible light to infrared. SNSPD mainly uses low-temperature superconducting ultra-thin film materials, such as NbN, Nb, NbTiN, etc. The typical thickness is about 5nm, and the device usually adopts a zigzag nanowire structure with a width of about 100nm. [0003] SNSPD is placed in a low temperature environment (<4K) when working, the device is in a superconducting state, and a certain bias current I is applied b , I b Slightly less than the critical current I of the device c . When a single photon is incident on the nanowire in the device, it will disassemble the Cooper pair and form a large number of hot electro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J11/00
Inventor 尤立星陈思井王永良刘登宽谢晓明江绵恒
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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