A multilayer asymmetric metamaterial based on phase-change materials or topological insulating materials
A technology of topological insulation and phase change materials, which is used in electrical components, antennas, etc.
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[0019] First, an N (N>=1) layer multilayer structure (metal layer 3-phase change material or topological insulating material layer 4-metal layer 3-oxidation layer 5) 2 is formed on the glass substrate 1 by a material growth process, such as attached figure 2 (a) shown.
[0020] Second, deposit SiO on the multilayer structure 2 2 film as a mask 6, as attached figure 2 (b) shown.
[0021] Then, the designed resonant cell array is transferred to the mask through the mask process, as shown in the attached figure 2 (c) shown. Among them, the structure design can adopt algorithms such as finite time domain difference method and finite element method.
[0022] Then, through an etching process, the resonant unit array 7 is prepared on the 2 materials, and the resonant unit deviates from its central position while penetrating the lower metal layer-phase-change material or topological insulating material layer-upper metal layer-oxidation layer, as shown in the attached figure 2 (d...
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