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Cavity liquid tin target generator for laser plasma pole ultraviolet source

A laser plasma, extreme ultraviolet light source technology, applied in microlithography exposure equipment, huge current X-ray tube, photolithography process exposure device, etc., can solve the problems of low efficiency, easy generation of debris, etc., to achieve system stability good performance, low cost and good radiation spectrum characteristics

Inactive Publication Date: 2013-08-21
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the solid target has a high density, it is easy to generate debris; a

Method used

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  • Cavity liquid tin target generator for laser plasma pole ultraviolet source
  • Cavity liquid tin target generator for laser plasma pole ultraviolet source
  • Cavity liquid tin target generator for laser plasma pole ultraviolet source

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Embodiment Construction

[0016] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings. It should be noted here that the descriptions of these embodiments are used to help understand the present invention, but are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0017] Such as figure 1 As shown, the cavity annular liquid tin target generator for laser plasma extreme ultraviolet light source provided by the example of the present invention includes a cavity 14, an electric heater 1, a thermal resistor 3, a vibrating rod 4, a gas source controller 5, Pressure transmitter 7, nozzle 8, cooling fan 9, cooling water jacket 10 and target chamber.

[0018] The electric heater 1 is placed in the cavity 14 and preferably has a spiral st...

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Abstract

The invention discloses a cavity liquid tin target generator for a laser plasma pole ultraviolet source. The cavity liquid tin target generator comprises a high pressure cavity body, an electric heater, a hot resistance, a shaking rod, an air source controller, a pressure transmitter, a nozzle, a cooling fan and a cooling water sleeve, wherein the electric heater is used for melting a solid state tin material in the cavity body into a liquid state tin material which is ejected from a cavity annular nozzle the two ends of which have pressure difference to form hollow liquid drops or hollow pillar-shaped liquid drop currents; the cavity annular nozzle contains the maximum atom number of EUV photon energy required by radiation, and the absorption efficiency is high; a compression system composed of the air source controller and the pressure transmitter is used for adding high pressure for a stock solution container; a target chamber is pumped and is filled with hydrogen or argon, and the EUV absorption and the damage of high-temperature high-pressure plasma on a collecting mirror are reduced. The cavity liquid tin target generator provided by the invention has the advantages that the ejecting distance is far, the laser absorption efficiency and EUV conversion efficiency are high, the system stability is good, the cost is cheap, and the cavity liquid tin target generator is more suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of laser extreme ultraviolet light sources, in particular to a cavity liquid tin target generator for laser plasma extreme ultraviolet light sources, mainly to provide a liquid tin target for extreme ultraviolet light sources with high conversion efficiency and low debris target. Background technique [0002] In the process of the development of electronic information industry, integrated circuit technology has played a very important role in the development of modern industry and people's life. The theme of the semiconductor manufacturing industry is to make the transistor as small as possible and integrate as many transistors as possible. With the continuous update of the chip technology, the chip technology has gradually shrunk from the initial 2μm chip technology to the current 22nm. 2μm and 22nm refer to the smallest scale that can be engraved by the chip process, and this scale is mainly determined b...

Claims

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Application Information

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IPC IPC(8): G03F7/20H05G2/00
Inventor 王梦瑶王新兵左都罗卢宏陆培祥
Owner HUAZHONG UNIV OF SCI & TECH
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