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High voltage semiconductor element and method of operation thereof

A technology of semiconductor and oxide semiconductor, which is applied in the direction of semiconductor devices, electrical components, electric solid devices, etc., and can solve problems such as low holding voltage

Active Publication Date: 2015-10-14
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the silicon controlled rectifier has the characteristic of low holding voltage, so the latch-up effect is easy to occur during normal operation

Method used

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  • High voltage semiconductor element and method of operation thereof
  • High voltage semiconductor element and method of operation thereof
  • High voltage semiconductor element and method of operation thereof

Examples

Experimental program
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Effect test

no. 1 example

[0042] Please refer to figure 1 , which shows a circuit diagram of the high-voltage semiconductor device 100 of the first embodiment. The high voltage semiconductor device 100 includes a high voltage metal oxide semiconductor transistor (HVMOS) 110 and an NPN electrostatic protection bipolar transistor (ESD BJT) 120 . The HVMOS transistor 110 acts as a high voltage current switch. The HVMOS transistor 110 has a drain (Drain) D0 , a source (Source) S0 , a gate (Gate) G0 and a base (Base) B0 . The gate G0 is electrically connected to an internal circuit 900 . When the input voltage of the gate G0 is higher than a driving voltage (Trigger Voltage), the HVMOS transistor 110 is driven.

[0043] The NPN electrostatic protection bipolar transistor 120 is used to absorb unnecessary electrostatic current to prevent the electrostatic current from damaging the high voltage metal oxide semiconductor transistor 110 . The NPN electrostatic protection bipolar transistor 120 has a collect...

no. 2 example

[0055] Please refer to image 3 , which shows a circuit diagram of the high-voltage semiconductor element 200 of the second embodiment. The high-voltage semiconductor element 200 and its operation method of the present embodiment are different from the high-voltage semiconductor element 100 of the first embodiment and its operation method in that the high-voltage semiconductor element 200 It further includes a PNP type electrostatic protection bipolar transistor 230, and the rest of the similarities will not be described again.

[0056] Such as image 3 As shown, the PNP electrostatic protection bipolar transistor 230 is connected in parallel with the NPN electrostatic protection bipolar transistor 120 . The PNP electrostatic protection bipolar transistor 230 has a collector C2, an emitter E2 and a base B2, the emitter E2 is electrically connected to the drain D0 and the collector C1, and the collector C2 is electrically connected to the source S0 and Emitter E1.

[0057] I...

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Abstract

The invention discloses a high voltage semiconductor element and an operation method thereof. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor and an NPN type electro-static discharge bipolar transistor. The high voltage metal-oxide-semiconductor transistor is provided with a drain and a source, the NPN type electro-static discharge bipolar transistor is provided with a collector and an emitter, the collector is electrically connected with the drain, and the emitter is electrically connected with the source.

Description

technical field [0001] The present invention relates to a semiconductor device and its operating method, and in particular to a high-voltage semiconductor device and its operating method. Background technique [0002] With the development of semiconductor technology, a power integrated circuit process integration technology (Bipolar CMOS DMOS, BCD) has been widely used in high-voltage semiconductor components. In the power integrated circuit process integration technology (BCD) process, the operating voltage is getting higher and higher, and the electrostatic discharge (ESD) protection on the chip becomes very important. [0003] High-voltage semiconductor devices generally have low on-state resistance (Rdson) characteristics. Therefore, when an electrostatic event occurs, the electrostatic current tends to concentrate on the surface or the edge of the source. High currents and high electric fields will cause physical damage to the surface of the junction region. [0004]...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 陈信良童文菁
Owner MACRONIX INT CO LTD