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Limited dual-polarity-controlled full bridge inverter

A full-bridge inverter, bipolar technology, applied in the direction of output power conversion device, AC power input conversion to DC power output, electrical components, etc., can solve the problems that the control method of the full-bridge inverter has not yet been reported. , achieve the effect of cost saving, simple peripheral circuit and prolonging the service life

Inactive Publication Date: 2015-02-11
吕莹
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the full-bridge inverter control method that can meet the above requirements has not been reported

Method used

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  • Limited dual-polarity-controlled full bridge inverter
  • Limited dual-polarity-controlled full bridge inverter
  • Limited dual-polarity-controlled full bridge inverter

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Embodiment Construction

[0029] The present invention will be further elaborated below in conjunction with the accompanying drawings of the description.

[0030] Such as figure 1 As shown, the full-bridge inverter with limited bipolar control of the present invention is characterized in that it includes:

[0031] The full-bridge circuit is composed of first to fourth transistor switching elements Q1 to Q4, wherein the first and second transistor switching elements Q1 and Q2 form a leading arm, and the third and fourth transistor switching elements Q3 and Q4 form a lagging arm;

[0032] The series resonant circuit is composed of an inductance L1 and a capacitor C5 connected in series, one end of which is connected between the above-mentioned first transistor switching element Q1 and the second transistor switching element Q2, and the other end is connected with the primary winding of the transformer of the external device;

[0033] a PWM drive unit, outputting control pulse signals for controlling the...

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Abstract

The invention relates to a limited dual-polarity-controlled full bridge inverter which comprises a full bridge circuit, a series resonant circuit, a PWM driving unit and a PID control unit. The full bridge circuit is formed by a first transistor switch element, a second transistor switch element, a third transistor switch element and a fourth transistor switch element, wherein the first transistor switch element and the second transistor switch element form a lead arm, and the third transistor switch element and the fourth transistor switch element form a lag arm. The series resonant circuit is formed by inductors and capacitors in series connection, one end of the series resonant circuit is connected between the first transistor switch element and the second transistor switch element, and the other end of the series resonant circuit is connected with a primary winding of a transformer of an external device. The PWM driving unit outputs control pulse signals controlling the first transistor switch element, the second transistor switch element, the third transistor switch element and the fourth transistor switch element. The PID control unit receives external loading feedback signals, compares the external loading feedback signals with set signals, and outputs results rectified by a PID to the PWM driving unit. The limited dual-polarity-controlled full bridge inverter enables the heat generated by the lead arm and the lag arm of the full bridge circuit of the limited dual-polarity-controlled full bridge inverter to be equal, prolongs the service life of transistors, and saves cost.

Description

technical field [0001] The invention relates to an inverter technology, in particular to a limited bipolar controlled full-bridge inverter. Background technique [0002] Transistor switching elements include thyristors, power field effect transistors or IGBTs (Insulated Gate Bipolar Transistor, insulated gate bipolar transistors), etc. as the main components of the inverter. There are many kinds of control technologies, and limited bipolar control can achieve zero The current turn-on and zero-voltage turn-off can effectively reduce the loss of the transistor. Among them, the leading bridge wall and the lagging bridge arm are turned on at the same time, which belongs to zero-current turn-on. The turn-off of the leading bridge arm is zero-off under the condition of zero voltage (about 3V). The voltage rise rate is related to the output current. The larger the output current, the higher the The higher the rate is, the harder the turn-off of the leading bridge wall transistor i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/5387
Inventor 徐奇峰吕莹王硕孙红艳
Owner 吕莹