Composite target and method for manufacturing the same

Abstract

A composite target and a method for manufacturing the same are described, which manufactures the composite target according an etching condition of a waste target. The waste target is generated after an original target at least having a substrate layer and a metal layer is processed through a sputtering process by a sputtering apparatus with a first magnetic field line distribution. By determining the etching condition caused by the first magnetic field line distribution, a magnetic layer with a second magnetic field line distribution is decided to dispose on the original target. The metal layer is formed on the substrate layer and / or the magnetic layer. The substrate layer, the magnetic layer and the metal layer are combined by a connection layer to form the composite target. The composite target can provide the second magnetic field line distribution to adjust the third magnetic field line distribution generated by the first magnetic field line distribution so as to improve usage rate (or utilization rate) of the target, thereby uniformly consuming the target.

Description

technical field [0001] The present invention relates to a composite target material and a manufacturing method thereof, in particular to a novel target material capable of uniformly consuming the target material and improving the utilization rate of the target material and a method for producing the target material. Background technique [0002] At present, sputtering technology (sputtering) is one of the methods used in the main deposition coating technology. The sputtering technology is widely used in the fields of industrial production and scientific research. For example, the surface of the workpiece can have the functions of superhard film, self-lubricating film, anti-reflection film, low-emissivity film, transparent conductive film or heat insulation film through sputtering. membrane. [0003] Furthermore, the principle of the sputtering technology is to use plasma (plasma) to carry out ion bombardment on the target (the target includes the substrate layer and the met...

AI Technical Summary

Problems solved by technology

However, for the supplier of the target, the supplier cannot directly obtain the relevant information of the magnetic flux ML from the sputtering machine 2 (because the target supplier is usually not the supplier of the sputtering machine 2). manufacturer), so after recycling the waste target material, it is still unable to effectively solve the problem of waste target material waste

[0009] Therefore, it is necessary to use the composite target material and its method provided by the present invention to solve the defects of uneven consumption of the target material in the prior art.

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