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A driving peak voltage suppression circuit

A technology for suppressing circuits and peak voltages, applied in electrical components, output power conversion devices, etc., can solve the problems of increasing driving resistance, weak driving peak voltage suppression capability, and long driving leads, so as to suppress sudden changes in voltage and realize driving Spike voltage, achieve the effect of suppression

Active Publication Date: 2016-08-10
SHENZHEN INVT ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the methods for suppressing the rapid growth of the driving peak voltage mainly include 1. increasing the capacitance between the grid (G) and the emitter (E) of the IGBT tube; 2. increasing the driving resistance on the grid; 3. Use positive and negative power supplies for power supply; 4. Use the driving optocoupler Miller clamp function. However, methods 1 and 2 are at the cost of increasing the switching loss of the IGBT tube, and the ability to suppress the driving peak voltage is not strong, especially When multiple IGBT tubes are used in parallel, the suppression effect of the driving peak voltage is even worse. Among them, methods 3 and 4 are not ideal for use on cabinet machines, mainly because the drive leads of cabinet machines are long, and the lead inductance suppresses instantaneous sudden changes in current. The ability is proportional to the stray inductance of the lead, which makes it difficult to obtain a better suppression effect of the driving spike voltage using methods 3 and 4

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Embodiment Construction

[0016] The embodiment of the present invention provides a driving peak voltage suppressing circuit, which is used for suppressing the driving peak voltage generated by the IGBT tube.

[0017] see figure 2 , which is an embodiment of the driving peak voltage suppression circuit in the embodiment of the present invention, including:

[0018] A transistor Q2, a first diode D8, a second diode D10, a first resistor R15, a second resistor R4, a first capacitor C5, a second capacitor C9 and at least two IGBT transistors (in the embodiment of the present invention, the Two IGBT tubes are used as an example to illustrate, respectively figure 2 IGBT tube S1 and IGBT tube S2 in the circuit diagram shown);

[0019] The first resistor R15 is connected to the first capacitor C5 and then connected in parallel to the first output terminal GU+ and the second output terminal VU of the driving power supply, that is, one end of the first resistor R15 is connected to one end of the first capac...

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PUM

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Abstract

An embodiment of the invention discloses a driving spike voltage suppression circuit which comprises a triode, a first diode, a second diode, a first resistor, a second resistor, a first capacitor, a second capacitor and at least two IGBT (isolated gate bipolar transistor) tubes; the first resistor and the first capacitor are connected with each other and then are connected onto a driving power source in parallel, one end, which is connected with the first capacitor, of the first resistor is connected with the first diode, and the other end of the first diode is connected with a base electrode of the triode; a collector electrode of the triode is further connected with one end of the second diode, and the other end of the second diode is connected with the driving power source; gate electrodes of the IGBT tubes are connected with an emitting electrode of the triode, the second capacitor is connected with the collector electrode of the triode and emitting electrodes of the IGBT tubes, and collector electrodes of the IGBT tubes are connected with a direct-current voltage input end; the second resistor is connected with the driving power source and the emitting electrode of the triode. The driving spike voltage suppression circuit has the advantage that voltage jump can be suppressed by the aid of the second capacitor, so that driving spike voltages can be effectively suppressed.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to a driving peak voltage suppression circuit. Background technique [0002] In most of the current power inverter devices, the driving spike caused by the Miller capacitance of the insulated gate bipolar transistor (English full name: Insulated Gate Bipolar Transistor, abbreviated as: IGBT) is an obvious phenomenon, please refer to figure 1 , figure 1 is the principle circuit diagram of the IGBT Miller effect in the prior art, wherein V GE The point where the arrow points to is the point where the voltage is V GE , I m The direction of the arrow on the curve refers to the current I in the circuit m In the flow direction, when the IGBT tube S2 is turned off and the IGBT tube S1 is turned on, dV will be generated at the gate of the IGBT tube S2 ce / dt voltage change, current I m Miller capacitor C flowing through IGBT tube S2 CG , the drive resistor R G and drive the optocoup...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/32
Inventor 黎香壮吴淑良唐益宏刘凯
Owner SHENZHEN INVT ELECTRIC