A kind of magnetron sputtering equipment

Abstract

The invention provides magnetron sputtering equipment which comprises a reaction cavity, a radio frequency coil and a coil radio frequency power supply, wherein the radio frequency coil winds around the side wall of the reaction cavity and is connected with the coil radio frequency power supply; a convergence magnet used for allowing a magnetic field generated by the radio frequency coil to be distributed by being biased toward the central line of the reaction cavity is arranged on the outer side of the radio frequency coil; the convergence magnet is made of a soft magnetic ferrite material of which the frequency range is matched with the operating frequency of the radio frequency power supply. According to the provided magnetron sputtering equipment, the distribution conditions of a magnetic force line generated by the radio frequency coil can be changed by means of the convergence magnet, so that the utilization rate of the radio frequency energy can be improved, and the environmental pollution in the reaction cavity and the target waste can be reduced.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a magnetron sputtering device. Background technique [0002] In the microelectronics industry, magnetron sputtering technology is one of the important means of producing integrated circuits, liquid crystal displays, thin-film solar cells and LEDs, and plays an important role in industrial production and scientific fields. Especially in recent years, due to the market's growing demand for high-quality products, companies have been prompted to continuously improve magnetron sputtering equipment. [0003] figure 1 It is a schematic structural diagram of the existing magnetron sputtering equipment. Such as figure 1 As shown, the magnetron sputtering equipment includes a reaction chamber 10 , a bottom electrode 14 , a target 11 , a magnetron 12 and a radio frequency coil 13 . Wherein, the lower electrode 14 is arranged at the lower position inside the reaction c...

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Problems solved by technology

On the one hand, the magnetic field lines located outside the reaction chamber 10 cannot be utilized, resulting in waste of radio frequency energy; on the other hand, the magnetic field strength in the reaction chamber 10 cannot meet the process requirements.

Although the magnetic field strength in the reaction chamber 10 can be increased by increasing the radio frequency power on the radio frequency coil 13, this will increase the heat loss of the radio frequency coil 13 and increase the plasma potential, thereby causing some metal ions to bombard the chamber wall, not only The environment of the reaction chamber is polluted, and the target is wasted

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