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Polysilicon thin layer deposition method

A technology of polysilicon film and deposition method, which is applied in polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve the problems that the thickness uniformity of polysilicon film layer cannot be effectively controlled and affects the performance of semiconductor devices, etc.

Active Publication Date: 2013-09-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thickness uniformity of the polysilicon thin film layer cannot be effectively controlled, which ultimately affects the performance of semiconductor devices

Method used

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  • Polysilicon thin layer deposition method
  • Polysilicon thin layer deposition method
  • Polysilicon thin layer deposition method

Examples

Experimental program
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no. 1 example

[0032] refer to Figure 4 , the polysilicon film layer deposition method of the first embodiment includes:

[0033] Step S1: providing a substrate, different material layers are formed on the surface of the same substrate, and each material layer is located in a different area;

[0034] Step S2: putting the substrate into the reaction chamber;

[0035] Step S3: feeding a pre-deposition gas into the reaction chamber for pre-deposition, and forming a first polysilicon thin film layer on the substrate;

[0036] Step S4: feeding a main deposition gas into the reaction chamber to perform main deposition to form a second polysilicon thin film layer on the first polysilicon thin film layer.

[0037] The method for depositing a polysilicon thin film layer according to the first embodiment of the present invention will be described in detail below with reference to the schematic diagram of the cross-sectional structure.

[0038] refer to Figure 5 , providing a substrate 101, the s...

no. 2 example

[0066] The difference between the second embodiment and the first embodiment is that different material layers in this embodiment are formed on different substrate surfaces.

[0067] The volume of the reaction chamber is generally large, and many substrates are usually placed in the reaction chamber, so that the polysilicon layer deposition process can be performed on all the substrates at the same time.

[0068] refer to Figure 8 , providing a first substrate 201 and a second substrate 201', the surfaces of the first substrate 201 and the second substrate 201' are formed with different material layers; the first substrate 201 and the second substrate 201' are put into the reaction cavity (not shown).

[0069] Wherein, the first substrate 201 and the second substrate 201' are two substrates put into the reaction chamber in the same batch.

[0070] In a specific example, refer to Figure 8 , the upper surface of the first substrate 201 is formed with a first material layer ...

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Abstract

The invention provides a polysilicon thin layer deposition method, comprising: providing a substrate, wherein different material layers are formed on a same substrate surface, each material layer is arranged on a different area, or different material layers are formed on at least two substrate surfaces; placing the substrate into a reaction chamber; introducing a predeposition gas into the reaction chamber for predeposition, and then forming a first polysilicon thin layer on the substrate, wherein the predeposition gas comprises a dilute gas and a siliceous gas, a volume ratio of the siliceous gas is 1-50%, and a flow velocity of the predeposition gas is 100-1000sccm; and introducing a main deposition gas into the reaction chamber for main deposition, and forming a second polysilicon thin layer on the first polysilicon thin layer, wherein the main deposition gas is a siliceous gas or comprises a siliceous gas and a dilute gas. By the polysilicon thin layer deposition method, a polysilicon thin layer with accuracy and uniform thickness can be obtained.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for depositing a polysilicon thin film layer. Background technique [0002] With the continuous improvement of the performance requirements of semiconductor devices, the difficulty of semiconductor manufacturing is also increasing. In the prior art, a thin film is grown and formed on the surface of the substrate through a deposition process, and the processing of the circuit is completed by the film forming technology. As the requirements for the performance of semiconductor devices continue to increase, there are strict requirements on the thickness and uniformity of the film formed on the surface of the substrate. [0003] Polysilicon is one of the very important material layers in semiconductor integrated circuits, and is often used to prepare devices such as gates. Polysilicon film is usually deposited by LPCVD (low pressure chemical vapor deposition) method, using Si...

Claims

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Application Information

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IPC IPC(8): C30B28/14C30B29/06
Inventor 许忠义
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP