High-power IGBT (Insulated Gate Bipolar Transistor) temperature acquisition protection circuit

Abstract

The invention discloses a high-power IGBT (Insulated Gate Bipolar Transistor) temperature acquisition protection circuit which comprises an IGBT temperature acquisition circuit and an IGBT double one-way hysteresis loop temperature protection circuit, wherein the IGBT temperature acquisition circuit is used for acquiring a temperature of an IGBT element; the IGBT double one-way hysteresis loop temperature protection circuit is used for receiving a signal output by the IGBT temperature acquisition circuit and processing the signal; the IGBT temperature acquisition circuit comprises a temperature acquisition element for acquiring the temperature of an IGBT element; the temperature acquisition element transmits acquired temperature data to a filtering circuit for filtering anti-interference, the filtering circuit transmits the processed data to a differential negative feedback circuit to carry out isolated output and a temperature voltage signal is output; the IGBT double one-way hysteresis loop temperature protection circuit comprises a one-way hysteresis loop low temperature protection circuit and a high temperature one-way protection circuit which are mutually connected in parallel; and the one-way hysteresis loop low temperature protection circuit and the high temperature one-way protection circuit are used for receiving the temperature voltage signal output by the IGBT temperature acquisition circuit by respective operational amplifiers and carrying out processing on the temperature voltage signal. According to the invention, the IGBT temperature is detected in real time; protection measures can be timely taken; and working reliability of equipment is improved.

Description

technical field [0001] The invention relates to the field of power electronic protection, in particular to a high-power IGBT temperature acquisition and protection circuit. Background technique [0002] Since the world's first MOSFET and IGBT came out, voltage-controlled power electronic devices, especially IGBT, are undergoing a rapid development process. The voltage of the IGBT single-module device is getting higher and higher, and the current is getting bigger and bigger. At the same time, the supporting drive devices have also been vigorously developed. As the application fields of devices become wider and wider, the conversion power of power supply equipment is getting larger and larger. There are already many methods for IGBT temperature acquisition and protection. dt is easy to cause interference and damage to the acquisition circuit, so it is necessary to adopt an isolation method with strong anti-interference ability to collect temperature and protect it in time. ...

AI Technical Summary

Problems solved by technology

As the device application field becomes wider and wider, the conversion power of power supply equipment is getting larger and larger. There are many methods for IGBT temperature acquisition and protection. dt is easy to cause interference and damage to the acquisition circuit, so it is necessary to adopt an isolation method with strong anti-interference ability to collect temperature and protect it in time

[0003] IGBT is a high-power composite device. With the increase of IGBT power, the switching loss and conduction loss increase, which makes the IGBT junction temperature rise. When the IGBT junction temperature exceeds 175 degrees, the IGBT is damaged. Therefore, a reasonable Designed for heat dissipation, when the IGBT current is too large, the heat dissipation device cannot dissipate the heat in time, and the IGBT will burn out

[0004] An IGBT module over-temperature protection circuit (Patent No. 2010201111182.7). This module is protected by a separate isolated power supply, which makes the circuit complex and reduces reliability and increases costs. The hysteresis comparison circuit does not use a single-phase hysteresis protection circuit. Drift reasons, protection accuracy and reliability are not ideal

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