A highly conductive thermal insulating metal base printed circuit board
A technology of printed circuit boards and insulated metals, applied in the field of high thermal conductivity insulating metal-based printed circuit boards and its preparation, can solve the problem of difficulty in meeting the heat dissipation requirements of high-power electronic components, the difficulty in meeting the heat dissipation of high-power electronic components, and poor thermal conductivity and other issues, to achieve stable and reliable product quality, easy control of process parameters, and high production efficiency
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Embodiment 1
[0021] The highly thermally conductive insulating metal-based printed circuit board of this embodiment includes a metal base, a metal transition layer sequentially formed on the metal base, a SiN ceramic layer formed by reactive magnetron sputtering, and a SiN ceramic layer formed on the ceramic layer. metal conductive layer. The metal-based printed circuit board is prepared by the above method, wherein step 120 deposits the metal transition layer using the following process: the target material is a metal sputtering target with a purity of 99.99 wt%, and the background vacuum degree of the vacuum chamber is 5×10 -4 Pa, the flow rate of Ar is 20 sccm, the argon gas pressure is 2 Pa, the sputtering power of the sputtering target is 40W, the deposition temperature is 25°C, and the deposition thickness is 100nm; the metal layer deposited under these low temperature conditions has an amorphous structure It is a non-conductive structure, and its thermal conductivity is good. The u...
Embodiment 2
[0023] The highly thermally conductive insulating metal-based printed circuit board of this embodiment includes a metal base, a metal transition layer sequentially formed on the metal base, an AlN ceramic layer formed by reactive magnetron sputtering, and an AlN ceramic layer formed on the ceramic layer. metal conductive layer. The metal-based printed circuit board is prepared by the above method, wherein step 120 deposits the metal transition layer using the following process: the target material is a metal sputtering target with a purity of 99.99 wt%, and the background vacuum degree of the vacuum chamber is 5×10 -4 Pa, the flow rate of Ar is 20 sccm, the argon gas pressure is 2 Pa, the sputtering power of the sputtering target is 40W, the deposition temperature is 25°C, and the deposition thickness is 100nm; the metal layer deposited under these low temperature conditions has an amorphous structure It is a non-conductive structure, and its thermal conductivity is good. The...
Embodiment 3
[0025] The highly thermally conductive insulating metal-based printed circuit board of this embodiment includes a metal base, a metal transition layer formed sequentially on the metal base, and an Al layer formed by reactive magnetron sputtering. 2 o 3 A ceramic layer, and a metal conductive layer formed on the ceramic layer. The metal-based printed circuit board is prepared by the above method, wherein step 120 deposits the metal transition layer using the following process: the target material is a metal sputtering target with a purity of 99.99 wt%, and the background vacuum degree of the vacuum chamber is 5×10 -4 Pa, the flow rate of Ar is 20 sccm, the argon gas pressure is 2 Pa, the sputtering power of the sputtering target is 40W, the deposition temperature is 25°C, and the deposition thickness is 100nm; the metal layer deposited under these low temperature conditions has an amorphous structure It is a non-conductive structure, and its thermal conductivity is good. The ...
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