NAND flash memory storage equipment and out-of-band data reading method thereof

An out-of-band data, flash memory storage technology, applied in the field of NAND flash memory storage devices, to achieve the effect of eliminating bit inversion, shortening transmission time, and improving reading efficiency

Inactive Publication Date: 2013-10-16
RENICE TECH CO
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  • Abstract
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  • Claims
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Problems solved by technology

like figure 2 As shown, assuming that there are 4 NAND flash memories 201 in one NAND flash memory channel, the time required to read a full page

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  • NAND flash memory storage equipment and out-of-band data reading method thereof
  • NAND flash memory storage equipment and out-of-band data reading method thereof
  • NAND flash memory storage equipment and out-of-band data reading method thereof

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Embodiment Construction

[0034] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0035] The present invention adopts cyclic redundancy check and traditional error detection / error correction algorithm: data and out-of-band data adopt error detection / error correction algorithm, while out-of-band data adopts cyclic redundancy check (Cyclic Redundancy Check, CRC) algorithm alone. To check for errors. When you only need to read out-of-band data, first read the out-of-band data and the CRC code for error detection. If there is an error, read the entire data page for error detection / error correction. If there is no error, continue to read the next out-of-band data.

[0036] Such...

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Abstract

The invention is suitable for the technical field of NAND flash memory storage equipment and provides NAND flash memory storage equipment. The flash memory storage equipment comprises a plurality of NAND flash memory channels. Each NAND flash memory channel is provided with a plurality of NAND flash memories, and each NAND flash memory is provided with at least one data storage unit and an out-of-band data storage unit, wherein the at least one data storage unit corresponds to a mistake detection / mistake correction unit respectively, and the at least one mistake detection / mistake correction unit is used for encoding data and out-of-band data; the out-of-band data storage unit corresponds to a verification unit used for verifying the out-of-band data when the out-of-band data are read. According to the NAND flash memory storage equipment, the NANAD flash memories are quickly scanned by means of cyclic redundancy check, and a method for building a mapping table from a logical block address to a physical block address can shorten transmission time and improve storage efficiency.

Description

Technical field [0001] The invention belongs to the technical field of NAND flash memory storage devices, and particularly relates to a NAND flash memory storage device and a method for reading out-of-band data. Background technique [0002] NAND flash memory has the advantages of non-volatile, high reliability, low power consumption, and small size. With the advancement of technology, the storage density is getting higher and higher, and the cost of unit storage capacity is also declining. Based on the above advantages, NAND Flash memory storage devices are more and more widely used. Now NAND flash memory is widely used in memory cards, USB flash drives, mobile audio and video playback devices, smart phones, etc. [0003] A NAND flash memory can be divided into 1024 or 2048 or other numbers of blocks in structure. Each block can be divided into 64 or 128 or other numbers of pages, and the size of each page can be 2K or 4K or other numbers of bytes. [0004] The basic operation of ...

Claims

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Application Information

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IPC IPC(8): G06F11/10
CPCG06F11/1068G11C16/26G11C2029/0409G11C2029/0411
Inventor 楚一兵
Owner RENICE TECH CO
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