Method for quickly testing quality of cobalt silicide based on reflectance-spectral fitting

A quality inspection method and reflection spectrum technology, which is applied in the field of wafer processing quality inspection, can solve problems such as cost and time waste, achieve cost saving, avoid cost and time waste, and facilitate the detection process

Active Publication Date: 2013-10-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its disadvantage is that using this method to detect abnormal cobalt-silicon com

Method used

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  • Method for quickly testing quality of cobalt silicide based on reflectance-spectral fitting
  • Method for quickly testing quality of cobalt silicide based on reflectance-spectral fitting
  • Method for quickly testing quality of cobalt silicide based on reflectance-spectral fitting

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Embodiment Construction

[0025] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] In the semiconductor fab, there are many reflection spectrum metrology tools configured for various thickness measurements in the wafer processing process. The reflection spectrum measurement tools adopt the reflection spectrum fitting metrology system of NOVA or KT.

[0027] Such as figure 1 Shown, a kind of embodiment based on the fast cobalt-silicon compound quality detection method of reflection spectrum fitting, this method comprises the following steps:

[0028] Step 1, such as figure 2 Shown is a schematic structural view of an embodiment of a semiconductor device on which a cobalt-silicon compound 1 has been formed. A gate oxide 2 is formed in the middle region of the silicon substrate, an N+ polysilicon 3 is formed on the gate oxide 2, and sidewall linings 4 are formed on both sides of the gate oxide 2 and the N+ polysilicon 3, The ...

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Abstract

The invention discloses a method for quickly testing quality of a cobalt silicide based on reflectance-spectral fitting, and the method comprises steps of: 1, irradiating on line a zone, in which the cobalt silicide is formed, with detection light beams by utilizing a reflectance-spectral measurement tool after the cobalt silicide is formed; 2, receiving the detection light beams reflected by the zone, in which the cobalt silicide is formed, by utilizing the reflectance-spectral measurement tool; 3, making a reflectance spectrum according to the reflected the detection light beams by utilizing the reflectance-spectral measurement tool; 4, plotting a corresponding intrinsic curve according to the reflectance spectrum by utilizing the reflectance-spectral measurement tool; 5, judging whether the proportion of each compound in which the cobalt silicide is formed in accord with the requirement of technology or not according to the intrinsic curve of the reflectance spectrum, and if YES, subsequent processes for a wafer are carried out; if NO, an abnormal production process is stopped. According to the invention, the waste of large amount of cost and time is avoided and the loss is reduced.

Description

technical field [0001] The invention relates to a wafer processing quality detection technology in the field of semiconductors, in particular to a fast cobalt-silicon compound quality detection method based on reflection spectrum fitting. Background technique [0002] Cobalt silicide has low resistivity and high thermal stability, making it a suitable material for VLSI applications at the 0.18 / 0.90um node. [0003] Cobalt silicide is usually formed by a two-step thermal process: [0004] Co + Si --- CoSi (450°C); [0005] CoSi + Si --- CoSi2 (700°C); [0006] According to the above formula, first at 450°C, cobalt and silicon are combined into cobalt silicide (CoSi) through thermal process, and then heated to 700°C, at 700°C, cobalt silicide (CoSi) CoSi) and silicon are converted into cobalt disilicide (CoSi2) through thermal process, which is commonly referred to as cobalt silicide. [0007] Heat control is crucial for cobalt-silicon compounds. By increasing the temperat...

Claims

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Application Information

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IPC IPC(8): G01B11/06H01L21/66
Inventor 李协喆李志国
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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