A rapid quality detection method for cobalt-silicon compounds based on reflection spectrum fitting

Abstract

The invention discloses a fast cobalt-silicon compound quality detection method based on reflection spectrum fitting, comprising: 1. After the cobalt-silicon compound is formed, a reflection spectrum measurement tool irradiates a probe beam on the area where the cobalt-silicon compound is formed; 2. Reflection spectrum The metrology tool receives the probe beam reflected back from the area where the cobalt-silicon compound is formed; 3. The reflection spectrum metrology tool makes its reflection spectrum according to the reflected probe beam; 4. The reflection spectrum metrology tool makes its corresponding light according to the reflection spectrum Intrinsic curve; 5. According to the intrinsic curve of the reflection spectrum of light, it is judged whether the proportion of each compound in the area where the cobalt-silicon compound is formed meets the process requirements. If so, the subsequent process is performed on the wafer, and if not, the abnormal process is stopped. Production. The invention adopts reflectance spectrum to quickly detect the quality of the cobalt-silicon compound on-line, avoiding a lot of waste of cost and time, and reducing losses.

Description

technical field [0001] The invention relates to a wafer processing quality detection technology in the field of semiconductors, in particular to a fast cobalt-silicon compound quality detection method based on reflection spectrum fitting. Background technique [0002] Cobalt silicide has low resistivity and high thermal stability, making it a suitable material for VLSI applications at the 0.18 / 0.90um node. [0003] Cobalt silicide is usually formed by a two-step thermal process: [0004] Co + Si --- CoSi (450°C); [0005] CoSi + Si --- CoSi2 (700°C); [0006] According to the above formula, first at 450°C, cobalt and silicon are combined into cobalt silicide (CoSi) through thermal process, and then heated to 700°C, at 700°C, cobalt silicide (CoSi) CoSi) and silicon are converted into cobalt disilicide (CoSi2) through thermal process, which is commonly referred to as cobalt silicide. [0007] Heat control is crucial for cobalt-silicon compounds. By increasing the temperat...

AI Technical Summary

Problems solved by technology

Its disadvantage is that using this method to detect abnormal cobalt-silicon compounds is a very long process cycle, resulting in a lot of waste of cost and time

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