Field calibration method of on-wafer load traction measurement system

A technology of load-pull and measurement system, applied in the field of large-signal parameter performance, which can solve the problems of lack of effective measurement measures for overall performance indicators, large differences in load-pull parameter measurement results, inconsistent curves of test output power, gain, and efficiency, etc.

Active Publication Date: 2013-10-23
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology

[0003] The load-pull measurement system is very complicated, especially in the sheet measurement system. There are no effective measurement measures for its overall performance indicators. Due to the introduction of products from different manufacturers and the constraints of

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  • Field calibration method of on-wafer load traction measurement system
  • Field calibration method of on-wafer load traction measurement system
  • Field calibration method of on-wafer load traction measurement system

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[0034] The present invention will be explained and described in more detail below in combination with specific embodiments.

[0035]A method for on-site calibration of an on-chip load pulling measurement system, specifically comprising the following steps:

[0036] In the first step, a series of mismatch attenuation monoliths with different reflection coefficients are developed as transfer standard parts, and the reflection coefficient coverage range of the transfer standard parts is: 0.1-0.8.

[0037] The present invention calibrates the developed transmission standard parts by building a calibration device, unifies the value of the on-chip load traction system, and provides a practical way to trace the source of the value of the on-chip load traction system, so the development and calibration of the transmission standard parts Work is an important link to realize the traceability of quantity and value.

[0038] In order to ensure a stable, repeatable gain characteristic tha...

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Abstract

The invention discloses a field calibration method of an on-wafer load traction measurement system. The field calibration method comprises the steps of firstly, manufacturing a mismatching attenuation chip with the reflection coefficient within the range of 0.1-0.8 to be used as a transmitting standard component, then, using a vector network analyzer which is calibrated in an on-wafer mode for carrying out calibration measurement on the transmitting standard component, obtaining a standard conversion gain GT(S) of the transmitting standard component and the calibration uncertainty of the transmitting standard component, then, using the transmitting standard component after the calibration for carrying out conversion gain parameter calibration on the on-wafer load traction measurement system, and completing the working of traceability of a quantity value of the on-wafer load traction measurement system. According to the calibration technology, the comprehensive and actual calibration can be carried out on the performance index of the on-wafer load traction measurement system, the calibration deviation delta GT is given, the measurement uncertainty of the on-wafer load traction measurement system can be quantitatively given, help is brought to the unification of the quantity value of the on-wafer load traction measurement system, and measurement technique supporting is provided for development and production of a power single chip circuit.

Description

technical field [0001] In the field of microwave / millimeter wave measurement, it is about the technique of obtaining accurate large-signal parameter performance of devices by changing the source or load impedance. Background technique [0002] For linear devices, the performance under any load can be deduced through S-parameters under small signals, and the load-pull method is not necessary. However, microwave power transistors have a large output power and generally work in a large signal state, showing strong nonlinear characteristics. Therefore, the traditional small-signal design method based on linear theory can no longer meet the design requirements of microwave power transistors under large-signal conditions. Various power amplifiers are widely used in various electronic equipment, and the design of the power amplifier is actually to develop the matching network between power devices, and to study what kind of network can obtain high output power, high efficiency and...

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Application Information

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IPC IPC(8): G01R35/00
Inventor 栾鹏梁法国韩志国李静强孙晓颖孙静韩利华张贵军
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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