Non-volatile memory device and method of operating the same

Abstract

The invention provides a non-volatile memory device, including a set pulse generator configured to generate a set pulse, a reset pulse generator configured to generate a reset pulse based on the set pulse, and a write driver block configured to write second data to a second non-volatile memory cell using the reset pulse, while writing first data to a first non-volatile memory cell using the set pulse.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0037466 filed in the Korean Intellectual Property Office on Apr. 10, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments relate to semiconductor circuits, and more particularly, to nonvolatile memory devices capable of generating a reset pulse based on a set pulse during a set (set) data / reset (reset) data simultaneous programming operation, operating nonvolatile A method for a volatile memory device, and an electronic device including a nonvolatile memory device. Background technique [0004] Chalcogenide alloys are used as phase change materials for phase change random access memory (PRAM). Due to Joule heating induced by the current or voltage supplied to the phase change material, the phase change material changes from a crystalline state (low resistance) to an amorphous s...

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Problems solved by technology

[0005] Traditional PRAM does not support the operation of programming setting data and resetting data at the same time for different memory cells

Furthermore, when a conventional PRAM performs a read operation during a write operation, that is, when a read-while-write (RWW) operation is performed, if noise on the read path is generated by a signal on the write path, the read data may be corrupted by the noise, cause errors in RWW operation

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