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Fin field effect transistor and method for forming the same

A fin-type field effect and transistor technology, which is used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc. The effect of flatness

Active Publication Date: 2015-12-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for forming a fin field effect transistor to solve the problem of poor flatness of the side walls of the fin structure of the fin field effect transistor in the prior art

Method used

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  • Fin field effect transistor and method for forming the same
  • Fin field effect transistor and method for forming the same
  • Fin field effect transistor and method for forming the same

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Embodiment Construction

[0030] The method for forming the fin field effect transistor provided by the present invention will be further described in detail below with reference to the drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form, and are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0031] Please refer to figure 2 , providing a substrate 200, the substrate 200 can be a silicon substrate, or a substrate such as doped germanium, or a silicon-on-insulator (SOI) layer, etc., and can include various doped regions, deep buried layers, etc. . In this embodiment, the substrate 200 is etched to form a plurality of fin structures 201 through an existing feasible process. Shallow trench isolation (STI) 202 is formed between adjacent fin structures 201, and the STI 2...

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Abstract

The invention discloses a fin type field effect transistor and a forming method thereof. The side wall is repaired through the backflow technique, due to the fact that a backflow layer formed by the adoption of the backflow technique is made of selective epitaxial silicon, the backflow layer and the fin type structure have the same physico-chemical property, the flatness of the side wall can be well repaired, and accordingly the stability of the device is greatly improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] In the advanced complementary metal oxide semiconductor (CMOS) industry, with the arrival of 22nm and smaller dimensions, in order to improve the short channel effect and improve the performance of the device, the fin field effect transistor (FinField-effecttransistor, FinFET) has its unique structure is widely used. [0003] Such as Figure 1a with Figure 1b As shown, they are the front view and the left view of the fin field effect transistor respectively. The fin field effect transistor has an active region protruding from the substrate 100. This structure is long and narrow, so it is called a fin structure (fin) 102, a shallow trench isolation 101 is formed between two adjacent fin structures 102, a gate structure 103 is formed on the surface of the fin structure 102 an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335H01L29/06H01L29/772
Inventor 涂火金
Owner SEMICON MFG INT (SHANGHAI) CORP