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Semiconductor chip and package structure and method for forming same

A packaging structure and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as time-consuming and labor-intensive, cost-increasing difficulties, and achieve the effect of overcoming time-consuming and labor-intensive effects

Active Publication Date: 2016-02-03
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is that the chip can be docked without making an additional under-bump metallization layer, forming an ideal semiconductor chip and packaging structure for docking through-silicon vias, and overcoming the time-consuming, labor-intensive and cost-intensive difficulties of the above-mentioned process

Method used

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  • Semiconductor chip and package structure and method for forming same
  • Semiconductor chip and package structure and method for forming same
  • Semiconductor chip and package structure and method for forming same

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Embodiment Construction

[0044] Figure 2 to Figure 6 Shown is a preferred embodiment of the present invention, illustrating a schematic diagram of the steps of forming the semiconductor chip of the present invention. Such as figure 2 As shown, firstly, a semiconductor substrate 109 is provided, including a first surface 101 and a second surface 102 . The semiconductor substrate 109 is, for example, a silicon substrate, an epitaxial silicon substrate, a silicon germanium semiconductor substrate, a silicon carbide substrate or a silicon-on-insulator (SOI) substrate, and has The first surface 101 and the second surface 102 . In a preferred embodiment of the present invention, the upper surface 101 is, for example, the active surface of the substrate 109 , and the lower surface 102 is, for example, the back surface of the substrate 109 . The upper surface 101 is opposite to the lower surface 102 . The thickness of the substrate 109 is generally 750 micrometers (micrometer), but not limited thereto. ...

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Abstract

The invention discloses a semiconductor chip, and further provides a packaging structure and a method for forming the packaging structure. The semiconductor chip comprises a substrate, a through silicon via, a through silicon via structure, an upper protruding block and an insulating structure. The substrate is provided with an upper surface and a lower surface opposite to the upper surface; the through silicon via is formed in the substrate and penetrates through the upper surface and the lower surface; the through silicon via structure is arranged in the through silicon via, and comprises first through hole metal and second through hole metal; the upper protruding block is arranged on the upper surface, is electrically connected with the through silicon via structure, and comprises first protruding block metal and second protruding block metal; the insulating structure is arranged in the substrate, is away from the upper surface and surrounds the second through hole metal.

Description

technical field [0001] The present invention relates to a semiconductor chip and a packaging structure and a forming method thereof, in particular to a semiconductor chip and a packaging structure forming a through-silicon via structure and a forming method thereof. Background technique [0002] In the modern information society, micro-processing systems composed of integrated circuits (ICs) have long been widely used in all aspects of life, such as automatic control of household appliances, mobile communication equipment, personal computers, etc., all have integrated circuits usage of. With the advancement of technology and the various imaginations of electronic products in human society, integrated circuits are also developing in a more diverse, more sophisticated, and smaller direction. [0003] Generally, integrated circuits are formed through dies produced in existing semiconductor processes. The process of manufacturing crystal grains begins with the production of a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L21/768
Inventor 陈逸男徐文吉叶绍文刘献文
Owner NAN YA TECH
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