Light-emitting device and manufacturing method thereof

Abstract

The invention discloses a light-emitting device and a manufacturing method of the light-emitting device. The light-emitting device comprises a substrate, a light emitting diode grain, a first light-pervious layer, a light wavelength conversion layer and a second light-pervious layer. The substrate is provided with a grain attachment portion, the light emitting diode grain is arranged on the grain attachment portion, the substrate is provided with a base, and the base is made of light-pervious materials. The first light-pervious layer covers the side face of the light emitting diode grain, the light wavelength conversion layer evenly covers the first light-pervious layer and the light emitting diode grain, and the second light-pervious layer covers the light wavelength conversion layer.

Description

technical field [0001] The invention relates to a light-emitting device and a manufacturing method thereof, in particular to a light-emitting device and a manufacturing method thereof suitable for a light-emitting diode crystal grain whose base is made of a light-transmitting material. Background technique [0002] One of the common light-emitting diode technologies at present is to use blue light-emitting diodes to excite yellow phosphors to achieve optical color mixing effects, and the optical performance of this technology is deeply affected by the state of phosphor coating in the process of packaging components of light-emitting diodes . [0003] Please refer to figure 1 , which is a schematic diagram of a conventional light-emitting device. The light-emitting device 1 includes a substrate 11 , LED die 12 , a die-attaching portion 13 , a phosphor layer 14 and a cover layer 15 . Wherein the die bonding part 13 is arranged in the center of the substrate 11, the light emi...

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Problems solved by technology

[0004] Due to the material properties of the phosphor layer 14 (surface tension of the liquid, etc.) and the geometric relationship restrictions (such as a right-angle contact relationship) between the side surface of the light-emitting diode crystal grain 12 and the installation contact surface of the die adhesive portion 13, the phosphor powder layer 14 The part covering the side of the LED die 12 will have uneven thickness distribution, which will result in poor optical color mixed light characteristics, and then produce color halo phenomenon in the application of other back-end lamps

[0005] In the case where the phosphor layer 14 has an uneven thickness distribution on the side of the light-emitting diode crystal grain 12, the length of the light path of the front beam and the side beam passing through the phosphor layer 14 will be different, and the light cannot be mixed uniformly, which will greatly reduce the light emitting device. 1 The uniformity and consistency of its optical color performance

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