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A kind of preparation method of graphene conductive film

A conductive film, graphene technology, applied in the direction of graphene, nano carbon, etc., can solve the problem of high production cost, and achieve the effect of reducing damage, shortening preparation time, and reducing production cost

Active Publication Date: 2015-12-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems such as the high production cost of preparing graphene film on the existing copper substrate, the invention provides a kind of preparation method of graphene conductive film, comprising:

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Embodiment Construction

[0017] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0018] In the embodiment of the present invention, the copper thin film obtained by graphite surface electrodeposition method is used as the growth substrate, instead of the growth substrate of metal copper foil, and the growth of graphene is realized by CVD method under high temperature conditions; at the same time, the graphite electrode is used as the cathode, The electrochemical corrosion method is used to remove metal copper, and the simultaneous progress of copper corrosion and the preparation of copper film on the graphite surface is realized, which not only greatly reduces the production cost, but also improves the production efficiency.

[0019] see figure 1 and figure 2 , the embodiment of the present invention provides a kind of preparation method of graphene conductive film, this method comprises the following st...

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Abstract

The invention discloses a preparation method of a graphene conductive film, belonging to the technical field of semiconductor material preparation. The method comprises the following steps of: depositing metal copper on the surface of a graphite electrode by an electrochemical method; growing graphene on the copper surface by a chemical vapour deposition method; pasting a heat release adhesive tape on the graphene surface, and stripping a copper film from the surface of a graphite substrate to obtain an adhesive tape / graphene / copper composite film; by taking the composite film as an anode and the graphite as a cathode, corroding by an electrochemical method to remove copper at the outermost layer of the composite film to obtain an adhesive tape / graphene composite film; and transferring the graphene on the composite film to a transparent substrate to finally obtain a graphene conductive film. The preparation method of the graphene conductive film, disclosed by the invention, not only can effectively reduce the damage of graphene, but also shortens the preparation time and reduces the cost by synchronously finishing the preparation of the copper film and the corrosion of copper, and can be applied to the preparation of a large-area graphene conductive film.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a preparation method of a highly transparent graphene conductive film. Background technique [0002] In 2004, Professor Geim of the University of Manchester prepared graphene for the first time [K.S.Novoselov, A.K.Geim, S.V.Morozov, D.Jiang, Y.Zhang, S.V.Dubonos, I.V.Grigorieva, A.A.Firsov, Science2004, 306, 666.]. Graphene is a hexagonal honeycomb-like two-dimensional structure composed of a single layer of carbon atoms. The intrinsic electron mobility of graphene film can reach 200000cm at room temperature 2 / Vs, with excellent electrical properties [K.I.Bolotin, K.J.Sikes, Z.Jiang, M.Klima, G.Fudenberg, J.Hone, P.Kim, H.L.Stormer, SolidState Communications2008, 146, 351.]. In addition, graphene has extremely high light transmittance in the entire visible light region, and the study found that the light transmittance of single-layer graphene is clos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/186
Inventor 张大勇金智史敬元麻芃
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI